Surface Mount SOT 23 Package N Channel MOSFET JingYang 2N7002X Suitable for Battery Operated Systems
Key Attributes
Model Number:
2N7002X
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
2.5Ω@10V,0.3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
5pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
850mW
Input Capacitance(Ciss):
50pF@30V
Gate Charge(Qg):
-
Mfr. Part #:
2N7002X
Package:
SOT-23
Product Description
Product Overview
The 2N7002X is an N-Channel Enhancement Mode Power MOSFET designed for direct logic-level interfacing with TTL/CMOS. It is suitable for driving various loads including relays, solenoids, lamps, hammers, displays, memories, and transistors, making it ideal for battery-operated systems and solid-state relays. This lead-free product is available in a surface mount SOT-23 package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | VDS | 60 | V | |||
| ID | 0.3 | A | ||||
| RDS(ON) | VGS=4.5V | <2.5 | ||||
| Absolute Maximum Ratings | VDS | 60 | V | |||
| VGS | 20 | V | ||||
| ID (Continuous @ TC=25) | 0.3 | A | ||||
| Drain Current-Pulsed | IDM | 0.8 | A | |||
| Maximum Power Dissipation | PD (TC=25) | 0.85 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 556 | /W | ||
| Thermal Resistance, Junction-to-Case | RJC | 145 | /W | |||
| Off Characteristics | BVDSS | VGS=0V, ID=250A | 60 | 67 | - | V |
| IDSS | VDS=60V, VGS=0V | - | - | 1 | A | |
| IGSS | VGS=20V, VDS=0V | - | - | 100 | nA | |
| On Characteristics | VGS(th) | VDS=VGS, ID=250A | 1 | 1.6 | 2.5 | V |
| RDS(ON) | VGS=4.5V, ID=0.2A | - | 1.3 | 3 | ||
| RDS(ON) | VGS=10V, ID=0.3A | - | 1.2 | 2.5 | ||
| Forward Transconductance | gFS | VDS=10V, ID=0.2A | 0.08 | - | - | S |
| Dynamic Characteristics | Clss | - | 20 | 50 | PF | |
| Coss | - | 10 | 25 | PF | ||
| Crss | VDS=30V, VGS=0V, F=1.0MHz | - | 3.6 | 5 | PF | |
| Switching Characteristics | td(on) | VDD=30V, ID=0.2A, VGS=10V, RGEN=10 | - | 10 | - | nS |
| tr | - | 50 | - | nS | ||
| td(off) | - | 17 | - | nS | ||
| tf | - | 10 | - | nS | ||
| Total Gate Charge | Qg | VDS=10V, ID=0.115A, VGS=4.5V | - | 1.7 | 3 | nC |
| Diode Characteristics | VSD | VGS=0V, IS=0.115A | - | - | 1.2 | V |
| IS | - | - | 0.115 | A |
2405091034_JingYang-2N7002X_C5307993.pdf
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