loss P channel MOSFET for portable device power management JingYang JY2301AX featuring copper leadframe construction
Key Attributes
Model Number:
JY2301AX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
37.6pF@6V
Number:
1 P-Channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
660.8pF@6V
Mfr. Part #:
JY2301AX
Package:
SOT-23
Product Description
Product Overview
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.
Product Attributes
- Brand: JY Electronics (implied by www.jy-electronics.com.cn)
- Origin: China (implied by www.jy-electronics.com.cn)
- Package Type: SOT-23
- Material: Copper leadframe
- Certifications: None explicitly mentioned
Technical Specifications
| Parameter | Symbol | Test Condition | Limits | Unit |
| P-Channel 20-V (D-S) MOSFET Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | TA=25oC | -2.4 | A |
| Continuous Drain Current | ID | TA=70oC | -2 | A |
| Pulsed Drain Current | IDM | -10 | A | |
| Continuous Source Current (Diode Conduction) | Is | -1 | A | |
| Power Dissipation | PD | TA=25oC | 1.25 | W |
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | OC | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | Surface Mounted on 1 x 1 FR4 Board. | 90 | oC/W |
| Electrical Characteristics | ||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | -0.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS =12V | 100 | nA |
| Drain-Source Leakage Current | IDSS | VDS = -20 V, VGS = 0 V TJ = 25oC | -1 | uA |
| Drain-Source Leakage Current | IDSS | VDS = -16 V, VGS = 0 V, TJ = 55oC | -10 | uA |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5 V, ID = -2.4 A | 150 | m |
| Drain-Source On-Resistance | RDS(on) | VGS = -2.5 V, ID = -2.0 A | 170 | m |
| Diode Forward On Voltage | VSD | IS = -1.6 A, VGS = 0 V | -1.5 | V |
| Total Gate Charge | Qg | VDS = -6V, VGS = -5V ID = -2.8A | 6.396 | nC |
| Gate-Source Charge | Qgs | 2.24 | ||
| Gate-Drain Charge | Qg d | 1.05 | ||
| Turn-On Delay Time | td(on) | VDS=-15V, RD=15, RG = 6, VGS = -10V | 7.05 | ns |
| Turn-On Rise Time | tr | 9.836 | ||
| Turn-Off Delay Time | td(off) | 23.396 | ||
| Turn-Off Fall Time | tf | 7.692 | ||
| Input Capacitance | Ciss | VGS=0V,VDS=-6V,f =1.0MHz | 660.8 | pF |
| Output Capacitance | Coss | 110.4 | ||
| Reverse Transfer Capacitance | Crss | 37.6 |
2405091034_JingYang-JY2301AX_C5380422.pdf
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