Low RDS ON N Channel MOSFET 50V ESD Protection Model JingYang TNM3K50FX for Power Management Systems

Key Attributes
Model Number: TNM3K50FX
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
RDS(on):
4Ω@4.5V,200mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
33pF@25V
Pd - Power Dissipation:
160mW
Gate Charge(Qg):
4.7nC@10V
Mfr. Part #:
TNM3K50FX
Package:
SOT-523
Product Description

Product Overview

The TNM3K50FX is an N-Channel 50V ESD Protection N-MOSFET featuring a super high density cell design for extremely low RDS(ON). It offers exceptional on-resistance and maximum DC current capability, making it suitable for various power management applications.

Product Attributes

  • Brand: JY-Electronics
  • Origin: China
  • Model: TNM3K50FX
  • Revision: B2

Technical Specifications

ParameterSymbolLimitUnitNotes
Drain-Source Breakdown VoltageV(BR)DSS50VVGS=0V, ID=250A
Gate Threshold VoltageVGS(th)1.5VVDS=VGS, ID=1mA
Gate Leakage CurrentIGSS10AVDS=0V, VGS=20V
Zero Gate Voltage Drain CurrentIDSS1AVDS=50V, VGS=0V
Drain-Source On-ResistanceRDS(ON)2.5 - 3.5VGS=10V, ID=200mA
Drain-Source On-ResistanceRDS(ON)3.1 - 4VGS=4.5V, ID=200mA
Diode Forward VoltageVSD0.8 - 1.4VIS=0.44A, VGS=0V
Total Gate ChargeQg4.7nCVDS=25V, VGS=10V, ID=0.22A
Gate ChargeQgs1.7nC
Gate-Drain ChargeQgd0.8nC
Input CapacitanceCiss33pfVDS=25V, VGS=0V, f=1MHZ
Output CapacitanceCOSS25pf
Reverse Transfer CapacitanceCrss13pf
Turn-On Delay Timetd(on)10.1nsVDD=5V, RL =500, VGEN=5V,RG=10
Turn-On Rise Timetr7.3ns
Turn-Off Delay Timetd(off)31.3ns
Turn-Off Fall Timetf28.2ns

2405091033_JingYang-TNM3K50FX_C5307991.pdf

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