High voltage current controlled RF pin diode JSCJ BAP64-05 for attenuators and switches up to 3 GHz
Key Attributes
Model Number:
BAP64-05
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@175V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
175V
Voltage - Forward(Vf@If):
1.1V@50mA
Current - Rectified:
100mA
Mfr. Part #:
BAP64-05
Package:
SOT-23
Product Description
Product Overview
The BAP64-04, 05, and 06 are high voltage, current-controlled pin diodes designed for RF applications. They function as RF resistors in attenuators and switches, offering low diode capacitance, low forward resistance, and low series inductance. These diodes are suitable for applications operating up to 3 GHz.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Parameter | Symbol | BAP64-04/05/06 | Unit | Conditions |
| Continuous reverse voltage | VR | 175 | V | |
| Continuous forward current | IF | 100 | mA | |
| Power dissipation | PD | 250 | mW | Ta=25 |
| Thermal resistance from junction to ambient | RJA | 500 | /W | |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 ~ +150 | ||
| Forward Voltage | VF | 1.1 | V | IF=50mA |
| Reverse Current | IR1 | 10 | VR1=175V | |
| Reverse Current | IR2 | 1 | A | VR2=20V |
| Diode Capacitance | Cd1 | 0.52 | pF | VR=0V, f=1MHz |
| Diode Capacitance | Cd2 | 0.5 | pF | VR=1V,f=1MHz |
| Diode Capacitance | Cd3 | 0.35 | pF | VR=20V,f=1MHz |
| Diode Forward Resistance | Rd1 | 40 | IF=0.5mA, f=100MHz | |
| Diode Forward Resistance | Rd2 | 20 | IF=1mA, f=100MHz | |
| Diode Forward Resistance | Rd3 | 3.8 | IF=10mA, f=100MHz | |
| Diode Forward Resistance | Rd4 | 1.35 | IF=100mA, f=100MHz | |
| Charge Carrier Life Time | L | 1.55 | s | When switched from IF =10mA to IR=6mA;RL=100;measured at IR =3mA |
| Series Inductance | LS | 1.4 | nH | IF=10mA, f=100MHz |
2410121714_JSCJ-BAP64-05_C2910211.pdf
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