Low Capacitance Schottky Barrier Diode JSCJ BAT64-06 Suitable for Clamping and Isolation Circuits
Key Attributes
Model Number:
BAT64-06
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
800mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
1 Pair Common Anode
Voltage - Forward(Vf@If):
750mV@100mA
Current - Rectified:
250mA
Mfr. Part #:
BAT64-06
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAT64 series Schottky Barrier Diodes are designed for low-loss, fast-recovery applications. They are suitable for meter protection, bias isolation, and clamping circuits, featuring an integrated diffused guard ring for enhanced reliability and a low forward voltage.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23 Plastic-Encapsulate
- Diode Type: Schottky Barrier Diode
- Marking (BAT64-06): 66S
- Marking (BAT64-05): 65S
- Marking (BAT64-04): 64S
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Model | Peak Reverse Voltage (VRM/VR) | Non-repetitive Peak Forward Surge Current (IFSM) @t=8.3ms | Forward Current (IF) | Power Dissipation (PD) | Reverse Breakdown Voltage (VR) | Forward Voltage (VF) @IF | Reverse Current (IR) @VR | Capacitance between terminals (CT) @VR,f |
| BAT64-04, BAT64-05, BAT64-06 | 40 V | 0.8 A | 0.25 A | 250 mW | 40 V (Min) | 350 mV (Typ, IF=1mA) / 430 mV (Typ, IF=10mA) / 520 mV (Typ, IF=30mA) / 750 mV (Typ, IF=100mA) | 2 A (Max, VR=25V) | 6 pF (Typ, VR=1V, f=1MHz) |
2410121255_JSCJ-BAT64-06_C77332.pdf
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