N channel Power MOSFET Jingdao Microelectronics D9N20 with rugged avalanche and low on state resistance
Key Attributes
Model Number:
D9N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
RDS(on):
400mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
74W
Input Capacitance(Ciss):
1nF
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
D9N20
Package:
TO-252W
Product Description
Product Description
The D9N20 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche capability. This MOSFET is ideal for high-speed switching applications such as switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: China ()
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Pulsed Drain Current | IDM | 74 | A | Note 2 |
| Continuous Drain Current | ID | 9 | A | TC=25°C |
| Power Dissipation | PD | 180 | W | TC=25°C |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Avalanche Energy Single Pulsed | EAS | 36 | mJ | Note 3 |
| Operation Junction and Storage Temperature | TJ, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | Note |
| Junction to Case Thermal Resistance | RthJC | 2.31 | °C/W | Note |
| ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | ID=0.25mA, VGS=0V |
| Gate-Source Leakage Current | IGSS | ±1 | µA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 120 | nA | VDS=200V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 0.8 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.38 | Ω | VGS=10V, ID=4.5A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 1000 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 120 | pF | |
| Reverse Transfer Capacitance | CRSS | 31 | pF | |
| SWITCHING CHARACTERISTICS (NOTE1,2) | ||||
| Total Gate Charge | QG | 36 | nC | VDS=160V, VGS=10V, ID=9A |
| Gate-Drain Charge | QGD | 150 | nC | |
| Gate-Source Charge | QGS | 20 | nC | |
| Turn-On Delay Time | tD(ON) | 3.3 | ns | VDS=100V, VGS=10V, ID=9A, RG=20Ω |
| Turn-On Rise Time | tR | 16.5 | ns | |
| Turn-Off Delay Time | tD(OFF) | 35 | ns | |
| Turn-Off Fall Time | tF | 9.5 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 9 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 36 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=9A, VGS=0V |
| Reverse Recovery Time | trr | 370 | ns | IS=9A, VGS=0V, di/dt=100A/µs |
| Reverse Recovery Charge | Qrr | 0.95 | µC | IS=9A, VGS=0V, di/dt=100A/µs |
2203300930_Jingdao-Microelectronics-D9N20_C2981742.pdf
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