600V N channel VDmosfet Jingdao Microelectronics F10N60L with 30V gate source voltage and halogen free material
Key Attributes
Model Number:
F10N60L
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
10A
RDS(on):
1Ω@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Output Capacitance(Coss):
143pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.643nF@25V
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
F10N60L
Package:
TO-220F-3L
Product Description
Product Overview
These N-channel enhanced VDmosfets, obtained by self-aligned planar technology, reduce conduction loss, improve switching performance, and enhance avalanche energy. They are compliant with RoHS standards.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Certifications: RoHS compliant, UL flammability classification 94V-0, Halogen-free
- Case Material: Green molding compound
Technical Specifications
| Parameter | Symbol | Rating | Unit | Condition |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 600 | V | Ta=25C, Unless Otherwise Specified |
| Gate-Source Voltage | VGSS | 30 | V | Ta=25C, Unless Otherwise Specified |
| Continuous Drain Current | ID | 10 | A | Tc=25C |
| Pulsed Drain Current | IDM | 40 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 700 | mJ | Note 3 |
| Power Dissipation | PD | 50 | W | Tc = 25C |
| Operating junction and storage temperature | TJ,TSTG | -55 ~+150 | C | |
| Thermal Resistance | ||||
| Junction Case | RthJC | 4 | C/W | Tc=25C |
| Junction Case | RthJC | 63 | C/W | Tc=100C |
| Junction Ambient(min. footprint) | RthJA | C/W | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=0.25mA, VGS=0V |
| Gate-Source Leakage Current | IGSS | 10 | nA | VGS=30V,VDS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.0 | VGS=10V,ID=5A | |
| Drain-Source Leakage Current | IDSS | 1.0 | uA | VDS=600V,VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Forward Transfer Conductance | gfs | 5.0 | S | VDS=15V,ID=5A |
| Input Capacitance | CISS | 1643 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 143 | pF | |
| Output Capacitance | COSS | 11 | pF | |
| Total Gate Charge | QG | 2.6 | nC | VDD=480V,VGS=10V, ID=10A,IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | nC | ||
| Gate-Drain Charge | QGD | nC | ||
| Turn-On Delay Time | tD(ON) | 19 | ns | VDD=300V,VGS=10V, ID=10A,RG=25 (NOTE1,2) |
| Turn-On Rise Time | tR | 6.3 | ns | |
| Turn-Off Delay Time | tD(OFF) | 6.6 | ns | |
| Turn-Off Fall Time | tF | 33 | ns | |
| Body-Diode Continuous Current | IS | 10 | A | |
| Body-Diode Forward Voltage | VSD | 1.4 | V | IS=10A,VGS=0V |
| Reverse Recovery Time | trr | 425 | ns | IS=10A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.3 | uC | VGS=30V,VDS=0V |
2305040947_Jingdao-Microelectronics-F10N60L_C5632441.pdf
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