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quality Dual digital transistors JSCJ EMD9 with built in resistors designed to enhance performance in digital electronics factory
quality Dual digital transistors JSCJ EMD9 with built in resistors designed to enhance performance in digital electronics factory

Dual digital transistors JSCJ EMD9 with built in resistors designed to enhance performance in digital electronics

Key Attributes
Model Number: EMD9
Product Custom Attributes
Output Voltage(VO(on)):
100mV
Input Resistor:
13kΩ
Resistor Ratio:
4.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMD9
Package:
SOT-563
Product Description

EMD9 Dual Digital Transistors

The EMD9 is a dual digital transistor package containing two DTA114Y and DTC114Y transistors. This integrated component offers the convenience of built-in resistors, simplifying circuit design and reducing component count. It is suitable for various digital applications where space and component efficiency are critical.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: D9
  • Package: SOT-563
  • Type: Dual Digital Transistors (NPN+PNP)
  • Resistor Configuration: Built-in Resistors (R1, R2)

Technical Specifications

Parameter Symbol NPN (DTA114Y) Min NPN (DTA114Y) Typ NPN (DTA114Y) Max NPN (DTA114Y) Unit NPN (DTA114Y) Conditions PNP (DTC114Y) Min PNP (DTC114Y) Typ PNP (DTC114Y) Max PNP (DTC114Y) Unit PNP (DTC114Y) Conditions
Supply voltage VCC 50 V Ta=25 -50 V Ta=25
Input voltage VIN +40 V Ta=25 -40 V Ta=25
Output current IC(MAX) 100 mA Ta=25 -100 mA Ta=25
Power dissipation Pd 150 mW Ta=25 150 mW Ta=25
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 -55 150
Input voltage (off) VI(off) 0.3 V VCC=5V ,IO=100A -0.3 V VCC=-5V ,IO=-100A
Input voltage (on) VI(on) 1.4 V VO=0.3V ,IO=1mA -1.4 V VO=-0.3V ,IO=-1mA
Output voltage (on) VO(on) 0.1 0.3 V IO=5mA, II=0.25mA -0.1 -0.3 V IO=-5mA,II=-0.25mA
Input current II 0.88 mA VI=5V -0.88 mA VI=-5V
Output current (off) IO(off) 0.5 A VCC=50V, VI=0 -0.5 A VCC=-50V, VI=0
DC current gain GI 68 VO=5V ,IO=5mA 68 VO=-5V ,IO=-5mA
Input resistance R1 7 10 13 K 7 10 13 K
Resistance ratio R2/R1 3.7 4.7 5.7 3.7 4.7 5.7
Transition frequency fT 250 MHz VO=10V ,IO=5mA,f=100MHz 250 MHz VO=-10V ,IO=-5mA,f=100MHz

For further information, please visit www.jscj-elec.com.


2410121615_JSCJ-EMD9_C19268985.pdf

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