Miniature MOSFET JingYang JY3401X featuring low RDSon for energy conservation in electronic circuits
Key Attributes
Model Number:
JY3401X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
1 P-Channel
Output Capacitance(Coss):
187pF
Pd - Power Dissipation:
1.38W
Input Capacitance(Ciss):
1.104nF
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
JY3401X
Package:
SOT-23
Product Description
Product Overview
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.
Product Attributes
- Brand: JY Electronics (inferred from domain)
- Origin: China (inferred from domain)
- Package: SOT23
- Marking: 3401
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25oC | -4.2 | A | ||
| Continuous Drain Current | ID | TA=70oC | -3.5 | A | ||
| Pulsed Drain Current | IDM | -30 | A | |||
| Continuous Source Current (Diode Conduction) | Is | TA=25oC | -2.2 | A | ||
| Power Dissipation | PD | TA=25oC | 1.38 | W | ||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | OC | ||
| Maximum Junction-to-Ambient | RTHJA | 357 | oC/W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | -0.5 | -1.2 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS =12V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24 V, VGS = 0 V, TJ = 25oC | -1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24 V, VGS = 0 V, TJ = 55oC | -5 | uA | ||
| Drain-Source On-Resistance | RDS(on) | VGS = -10 V, ID = -4.2 A | 43 | 60 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5 V, ID = -4.0 A | 58 | 75 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS = -2.5 V, ID = -1.0A | 86 | 120 | m | |
| Forward Transconductance | gfs | VDS = -5V, ID = -5A | 11 | S | ||
| Diode Forward Voltage | VSD | IS = -1.0 A, VGS = 0 V | -1.0 | V | ||
| Reverse Recovery Time | Trr | IS =-4A,VGS=0V, di/dt=100A/uS | 20.2 | nS | ||
| Reverse Recovery Charge | Qrr | 11.2 | nC | |||
| Total Gate Charge | Qg | VDS = -15V, VGS = -4.5V ID = -4A | 9.4 | 16 | nC | |
| Gate-Source Charge | Qgs | 2 | nC | |||
| Gate-Drain Charge | Qgd | 3 | nC | |||
| Turn-On Delay Time | td(on) | VDS=-15V, RL=3.6,RG = 6, VGS = -10V | 6.3 | 13 | ns | |
| Turn-On Rise Time | tr | 3.2 | 8.4 | |||
| Turn-Off Delay Time | td(off) | 38.2 | 48.5 | |||
| Turn-Off Fall Time | tf | 12 | 21.3 | |||
| Input Capacitance | Ciss | VGS=0V,VDS=-15V,f =1.0MHz | 954 | 1104 | pF | |
| Output Capacitance | Coss | 115 | 187 | |||
| Reverse Transfer Capacitance | Crss | 77 | 97 | |||
| Gate Resistance | Rg | f =1.0MHz | 6 |
2405091034_JingYang-JY3401X_C3038099.pdf
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