Low Gate Charge N Channel Trench MOSFET JingYang JY2312X Suitable for Battery Protection and Power Control

Key Attributes
Model Number: JY2312X
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
34mΩ@2.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
500mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
500pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
JY2312X
Package:
SOT-23
Product Description

Product Overview

The N-Channel Trench Power MOSFET utilizes advanced trench technology to provide excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching applications, offering high power and current handling capability.

Product Attributes

  • Lead free product is acquired

Technical Specifications

Device MarkingDevice PackageVDS (V)ID (A)RDS(ON) @ VGS=4.5V (m)RDS(ON) @ VGS=2.5V (m)PD (W)TJ,TSTG (C)RJA (C/W)BVDSS (V)IDSS (A)IGSS (nA)VGS(th) (V)gFS (S)Ciss (pF)Coss (pF)Crss (pF)td(on) (nS)tr (nS)td(off) (nS)tf (nS)Qg (nC)Qgs (nC)Qgd (nC)ISD (A)VSD (V)
JY2312XSOT23206<26<341.3-55 To 1509620-2211000.5-1.14-850030014020196525102.32.951.2

2409302200_JingYang-JY2312X_C5307992.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.