Low Gate Charge N Channel Trench MOSFET JingYang JY2312X Suitable for Battery Protection and Power Control
Product Overview
The N-Channel Trench Power MOSFET utilizes advanced trench technology to provide excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching applications, offering high power and current handling capability.
Product Attributes
- Lead free product is acquired
Technical Specifications
| Device Marking | Device Package | VDS (V) | ID (A) | RDS(ON) @ VGS=4.5V (m) | RDS(ON) @ VGS=2.5V (m) | PD (W) | TJ,TSTG (C) | RJA (C/W) | BVDSS (V) | IDSS (A) | IGSS (nA) | VGS(th) (V) | gFS (S) | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (nS) | tr (nS) | td(off) (nS) | tf (nS) | Qg (nC) | Qgs (nC) | Qgd (nC) | ISD (A) | VSD (V) |
| JY2312X | SOT23 | 20 | 6 | <26 | <34 | 1.3 | -55 To 150 | 96 | 20-22 | 1 | 100 | 0.5-1.1 | 4-8 | 500 | 300 | 140 | 20 | 19 | 65 | 25 | 10 | 2.3 | 2.9 | 5 | 1.2 |
2409302200_JingYang-JY2312X_C5307992.pdf
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