Low Gate Threshold Voltage N Channel MOSFET JingYang TNM2K30KX 30 Volt Ideal for Switching Circuits
Key Attributes
Model Number:
TNM2K30KX
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@1.8V,200mA
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Input Capacitance(Ciss):
42pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
TNM2K30KX
Package:
SOT-23
Product Description
Product Overview
The TNM2K30KX-BI is an N-Channel 30-V (D-S) MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and easily designed drive circuits. This device is also easy to parallel and suitable for interfacing and switching applications.
Product Attributes
- Brand: JY Electronics
- Origin: China
- Marking: 3N2K
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID = 250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =28V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =8V, VDS = 0V | 10 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID =250A | 0.6 | 1.0 | V | |
| On Characteristics | ||||||
| Drain-Source On-Resistance | RDS(on) | VGS = 1.2V, ID =100mA | 3 | |||
| VGS =1.5V,ID =200mA | 2 | |||||
| VGS =1.8V,ID =200mA | 2 | |||||
| VGS =2.5V,ID =200mA | 1.6 | |||||
| VGS =4.5V,ID =500mA | 1.2 | |||||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 0.33 | mS | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 42 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 12.2 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 8 | pF | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 70 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 70 | ns | ||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 0.3 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 357 | /W | |||
2405091033_JingYang-TNM2K30KX_C3038096.pdf
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