Dual digital transistor JSCJ EMB9 in SOT-563 package offering compact size and reduced mounting area
Key Attributes
Model Number:
EMB9
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
13kΩ
Resistor Ratio:
5.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMB9
Package:
SOT-563
Product Description
Product Overview
The EMB9 is a dual digital transistor featuring two independent DTA114Y chips in a single SOT-563 package. Designed for automatic mounting machines, it offers advantages such as eliminating interference between transistor elements, halving mounting costs, and reducing mounting area. This product is suitable for applications requiring compact and efficient digital transistor solutions.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Package: SOT-563
- Type: Dual Digital Transistors (PNP+PNP)
- Features: Built-in Resistors
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Absolute maximum ratings | VCC | -50 | V | |||
| IC(MAX) | -100 | mA | ||||
| Vi | -40 | +6 | V | |||
| PD | 150 | mW | ||||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | Vi(on) | VO=-0.3V, IO=-1mA | -1.4 | V | ||
| Vi(off) | VCC=-5V, IO=-100A | -0.3 | V | |||
| VO(on) | IO=-5mA, Ii=-0.25 mA | -0.3 | V | |||
| Ii | Vi =-5V | -0.88 | mA | |||
| IO(off) | VCC=-50V, Vi=0 | -0.5 | A | |||
| Gi | VO =-5V, IO=-5mA | 68 | ||||
| fT | VO =-10V, IO=5mA, f =100MHz | 250 | MHz | |||
| Resistance | R1 | 7 | 13 | K | ||
| R2/R1 | 3.7 | 5.7 |
2410121810_JSCJ-EMB9_C2910275.pdf
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