Schottky Diode Array JSCJ BAT54V Surface Mount Device with 200 Milliamp Average Output Current Rating
Key Attributes
Model Number:
BAT54V
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54V
Package:
SOT-563
Product Description
Product Overview
The BAT54V is a surface-mount Schottky barrier diode array designed for various electronic applications. It offers fast switching speeds and low forward voltage drop, characteristic of Schottky diodes.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Origin: China
- Package Type: SOT-563
- Marking: KAV
Technical Specifications
| Parameter | Symbol | Limit/Test Conditions | Unit |
| Peak Repetitive Peak Reverse Voltage | VRRM | 30 | V |
| Working Peak Reverse Voltage | VRWM | 30 | V |
| DC Blocking Voltage | VR | 30 | V |
| Average Rectified Output Current | IO | 200 | mA |
| Power Dissipation | PD | 150 | mW |
| Thermal Resistance Junction to Ambient | RJA | 667 | /W |
| Reverse breakdown voltage | V(BR) | IR= 100A | 30 V |
| Reverse voltage leakage current | IR | VR=25V | 2 uA |
| Forward voltage | VF | IF=1mA | 320 mV |
| Forward voltage | VF | IF=10mA | 400 mV |
| Forward voltage | VF | IF=30mA | 500 mV |
| Forward voltage | VF | IF=100mA | 1000 mV |
| Total capacitance | CT | VR=1V,f=1MHz | 10 pF |
| Reverse recovery time | trr | IF=10mA, IR=10mA~1mA RL=100 | 5 ns |
| Storage Temperature | TSTG | -55 ~ +125 | |
| Operating Junction Temperature Range | TJ | -40 ~ +125 | |
| Non-repetitive Peak Forward Surge Current | IFSM | @ t=8.3ms | 600 mA |
| Repetitive Peak Forward Current | IFRM | @ t1s,0.5 | 300 mA |
2410121618_JSCJ-BAT54V_C3031895.pdf
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