Schottky Diode Array JSCJ BAT54V Surface Mount Device with 200 Milliamp Average Output Current Rating

Key Attributes
Model Number: BAT54V
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54V
Package:
SOT-563
Product Description

Product Overview

The BAT54V is a surface-mount Schottky barrier diode array designed for various electronic applications. It offers fast switching speeds and low forward voltage drop, characteristic of Schottky diodes.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Origin: China
  • Package Type: SOT-563
  • Marking: KAV

Technical Specifications

ParameterSymbolLimit/Test ConditionsUnit
Peak Repetitive Peak Reverse VoltageVRRM30V
Working Peak Reverse VoltageVRWM30V
DC Blocking VoltageVR30V
Average Rectified Output CurrentIO200mA
Power DissipationPD150mW
Thermal Resistance Junction to AmbientRJA667/W
Reverse breakdown voltageV(BR)IR= 100A30 V
Reverse voltage leakage currentIRVR=25V2 uA
Forward voltageVFIF=1mA320 mV
Forward voltageVFIF=10mA400 mV
Forward voltageVFIF=30mA500 mV
Forward voltageVFIF=100mA1000 mV
Total capacitanceCTVR=1V,f=1MHz10 pF
Reverse recovery timetrrIF=10mA, IR=10mA~1mA RL=1005 ns
Storage TemperatureTSTG-55 ~ +125
Operating Junction Temperature RangeTJ-40 ~ +125
Non-repetitive Peak Forward Surge CurrentIFSM@ t=8.3ms600 mA
Repetitive Peak Forward CurrentIFRM@ t1s,0.5300 mA

2410121618_JSCJ-BAT54V_C3031895.pdf

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