Plastic Encapsulated Schottky Diode JSCJ SBD20120TCTB Featuring 120 Volt Peak Reverse Voltage Rating
Key Attributes
Model Number:
SBD20120TCTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
1uA@120V
Voltage - DC Reverse (Vr) (Max):
120V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
780mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBD20120TCTB
Package:
TO-220-3L
Product Description
Product Overview
The SBD20120TCTB and SBDF20120TCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various applications requiring efficient rectification. The devices feature guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate Diodes
- Color: Green molding compound device (indicated by solid dot)
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Unit |
| SBD20120TCTB / SBDF20120TCTB | Peak repetitive reverse voltage | 120 | V | |||
| Working peak reverse voltage | 120 | V | ||||
| DC blocking voltage | 120 | V | ||||
| RMS reverse voltage | 62.5 | V | ||||
| Average rectified output current | 20 (2x10) | A | ||||
| SBD20120TCTB / SBDF20120TCTB | Non-Repetitive peak forward surge current | 8.3ms half sine wave | 150 | A | ||
| Reverse voltage (VBR) | IR=100uA | 120 | V | |||
| Reverse current (IR) | VR=120V | 5.0 | mA | |||
| Forward voltage (VF) | IF=5A, Tj=25 | 0.60 | V | |||
| SBD20120TCTB / SBDF20120TCTB | Forward voltage (VF) | IF=10A, Tj=25 | 0.78 | V | ||
| Forward voltage (VF) | IF=10A, Tj=125 | 0.66 | V | |||
| SBD20120TCTB / SBDF20120TCTB | Forward voltage (VF) | IF=5A, Tj=125 | 0.56 | V | ||
| Forward voltage (VF) | IF=5A, Tj=25 | 0.78 | V | |||
| SBD20120TCTB / SBDF20120TCTB | Forward voltage (VF) | IF=10A, Tj=25 | 0.85 | V | ||
| Forward voltage (VF) | IF=10A, Tj=125 | 0.78 | V | |||
| SBD20120TCTB / SBDF20120TCTB | Junction temperature (Tj) | 150 | ||||
| SBD20120TCTB / SBDF20120TCTB | Storage temperature (Tstg) | -55 | +150 | |||
| SBD20120TCTB / SBDF20120TCTB | Thermal resistance from junction to ambient (RJA) | 84 | /W | |||
| SBD20120TCTB / SBDF20120TCTB | Thermal resistance from junction to case (RJC) | Tc=25 | 20 | /W |
2410121810_JSCJ-SBD20120TCTB_C2924051.pdf
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