Schottky Barrier Rectifier JSCJ SBD3045CT with High Current Capability and Low Forward Voltage Drop
Key Attributes
Model Number:
SBD3045CT
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@45V
Non-Repetitive Peak Forward Surge Current:
250A
Voltage - DC Reverse (Vr) (Max):
45V
Voltage - Forward(Vf@If):
700mV@15A
Current - Rectified:
30A
Mfr. Part #:
SBD3045CT
Package:
TO-220-3L
Product Description
Product Overview
The SBD3045CT and SBDF3045CT are Schottky Barrier Rectifiers designed for high efficiency and low power loss. They feature high current capability and a low forward voltage drop, making them suitable for various power applications. The Guard Ring Die Construction provides transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBD3045CT, SBDF3045CT
- Package: TO-220-3L, TO-220F
- Marking: SBD(F)3045CT = Device code, Solid dot = Green molding compound device (if none, the normal device)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD3045CT (TO-220-3L/TO-220F) |
| Peak Repetitive Reverse Voltage | VRRM | 45 | V | ||||
| Working Peak Reverse Voltage | VRWM | 31.5 | V | ||||
| DC Blocking Voltage | VR | 45 | V | ||||
| RMS Reverse Voltage | VR(RMS) | 31.5 | V | ||||
| Average Rectified Output Current | IO | 30 (2x15) | A | ||||
| Non-Repetitive Peak Forward Surge Current (8.3ms half sine wave) | IFSM | 250 | A | ||||
| Thermal Resistance Junction to Ambient | RJA | 2.0 | /W | ||||
| Thermal Resistance Junction to Case | RJc | Tc=25 | 0.50 | /W | |||
| Junction Temperature | Tj | -55 | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Reverse Voltage | V(BR) | IR=1mA | 45 | V | |||
| Reverse Current | IR | VR=45V | 0.5 | mA | |||
| Forward Voltage | VF | IF=10A, Tj=25 | 0.50 | 0.55 | V | ||
| Forward Voltage | VF | IF=10A, Tj=125 | 0.45 | 0.50 | V | ||
| Forward Voltage | VF | IF=15A, Tj=25 | 0.57 | 0.61 | V | ||
| Forward Voltage | VF | IF=15A, Tj=125 | 0.52 | 0.57 | V | ||
| Junction Capacitance (Per Diode) | CJ | VR=4V, f=1MHz | 62.5 | pF |
2410121814_JSCJ-SBD3045CT_C496875.pdf
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