Plastic Encapsulated Schottky Diode Array JSCJ BAT54SDW SOT363 Package with Low Forward Voltage Drop
Product Overview
The BAT54DW/BAT54JW series from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD are Schottky Barrier Diode Arrays housed in a SOT-363 plastic-encapsulated package. These diodes offer a low forward voltage drop and fast switching speeds, making them suitable for various electronic applications. They feature a PN junction guard ring for enhanced transient and ESD protection and are available in lead-free versions. These devices are designed for surface mount applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-363
- Material: Plastic Encapsulate
- Marking: Solid dot = Green molding compound device, if none, Solid dot = Pin1 indicate. the normal device.
Technical Specifications
| Model | Repetitive Peak Reverse Voltage (VRRM) | Peak Working Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Forward Continuous Current (IO) | Repetitive Peak Forward Current (IFRM) | Non-repetitive Peak Forward Surge Current @t=8.3ms (IFSM) | Power Dissipation (PD) | Thermal Resistance From Junction To Ambient (RJA) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Reverse voltage (V(BR)) @ IR=100A | Reverse current (IR) @ VR=25V | Forward voltage (VF) @ IF=1mA | Forward voltage (VF) @ IF=10mA | Forward voltage (VF) @ IF=30mA | Forward voltage (VF) @ IF=100mA | Total capacitance (CTot) @ VR=1V,f=1MHz | Reverse recovery time (trr) @ IF=10mA, IR=10mA, Irr=0.1IR, RL=100 |
| BAT54ADW /BAT54BRW / BAT54CDW /BAT54SDW /BAT54TW /BAT54DW/BAT54JW | 30 V | 30 V | 30 V | 200 mA | 300 mA | 600 mA | 200 mW | 500 /W | 125 | -55~+150 | 30 V | 2 A | 320 mV | 400 mV | 500 mV | 1000 mV | 10 pF | 5 ns |
2410121236_JSCJ-BAT54SDW_C77323.pdf
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