Schottky Rectifier JSCJ SBD20H100CT Featuring Plastic Encapsulation and 100 Volt Peak Reverse Voltage
Key Attributes
Model Number:
SBD20H100CT
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@100V
Non-Repetitive Peak Forward Surge Current:
200A
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
850mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBD20H100CT
Package:
TO-220-3L
Product Description
Product Overview
The SBD20H100CT and SBDF20H100CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Codes: 20H100CT, F20H100CT
- Packaging: TO-220-3L, TO-220F
- Material: Plastic-Encapsulate Diode
- Color: Green molding compound device (if applicable, indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Conditions | SBD20H100CT | SBDF20H100CT | Unit |
| Peak repetitive reverse voltage | VRRM | 100 | 100 | V | |
| Working peak reverse voltage | VRWM | 100 | 100 | V | |
| DC blocking voltage | VR | 100 | 100 | V | |
| RMS reverse voltage | VR(RMS) | 70 | 70 | V | |
| Average rectified output current | IO | 20 | 20 | A | |
| Non-Repetitive peak forward surge current | IFSM | 8.3ms half sine wave | 200 | 200 | A |
| Junction temperature | Tj | 175 | 175 | ||
| Storage temperature | Tstg | -55~+175 | -55~+175 | ||
| Reverse voltage breakdown | V(BR) | IR=1mA | 100 | 100 | V |
| Reverse current | IR | VR=100V, Tj=25 | 0.5 | 0.5 | A |
| Reverse current | IR | VR=100V, Tj=150 | 50 | 50 | A |
| Forward voltage | VF | IF=10A, Tj=25 | 0.75 | 0.75 | V |
| Forward voltage | VF | IF=10A, Tj=150 | 0.58 | 0.58 | V |
| Forward voltage (Typical) | VF(typ) | IF=5A, Tj=25 | 0.66 | 0.66 | V |
| Forward voltage (Typical) | VF(typ) | IF=5A, Tj=150 | 0.50 | 0.50 | V |
| Thermal resistance junction to ambient | RJA | 75 | 75 | /W | |
| Thermal resistance junction to case | RJc | Tc=25 | 2.0 | 3.0 | /W |
| Total Capacitance | CTOT | f=1MHz, Tj=25 | 100 | 100 | pF |
2410121815_JSCJ-SBD20H100CT_C5295499.pdf
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