High Surge Current Schottky Rectifier Diode JSCJ SK34 with 30 Volt Rating SMBG Plastic Encapsulated
Key Attributes
Model Number:
SK34
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
70A
Reverse Leakage Current (Ir):
500uA@40V
Operating Junction Temperature Range:
-50℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
SK34
Package:
SMBG
Product Description
SMBG Plastic-Encapsulate Diodes
Schottky Rectifier Diodes with high surge current capability, available in voltage ratings from 20V to 200V. These diodes are designed for rectifier applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: SK 32 THRU SK 320
- Marking: SK3X (X: From 2 To 20)
- Polarity: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Conditions | SK 32 | SK 34 | SK 35 | SK 36 | SK 38 | SK 310 | SK 315 | SK 320 | |||
| Repetitive Peak Reverse Voltage | VRRM | V | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | |||
| Maximum RMS Voltage | VRMS | V | 14 | 21 | 28 | 35 | 42 | 56 | 70 | 105 | 140 | |||
| Average Forward Current | IF(AV) | A | 60HZ Half-sine wave, Resistance load, TL(Fig.1) | 3.0 | ||||||||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave , 1 cycle , Ta =25 | 70 | ||||||||||
| Junction Temperature | TJ | -50~+125 / -50~+150 | ||||||||||||
| Storage Temperature | TSTG | -50 ~ +150 | ||||||||||||
| Peak Forward Voltage | VF | V | IF =3.0A | 0.55 | 0.85 | 0.7 | 0.5 | 0.95 | 0.6 | 0.8 | 1.0 | 1.2 | 1.4 | |
| Peak Reverse Current | IRRM1 | mA | VRM=VRRM Ta =25 | 10 | ||||||||||
| Peak Reverse Current | IRRM2 | mA | VRM=VRRM Ta =100 | 5 | ||||||||||
| Thermal Resistance(Typical) | RJ-A | /W | Between junction and ambient (on P.C.B. with 0.6" x 0.6" copper pad) | 551) | ||||||||||
| Thermal Resistance(Typical) | RJ-L | /W | Between junction and terminal (on P.C.B. with 0.6" x 0.6" copper pad) | 201) | ||||||||||
2410121714_JSCJ-SK34_C2924028.pdf
Related Products
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
