Schottky Barrier Diode JSCJ BAS40-05 SOT-23 Package Low Forward Voltage Fast Switching Speed
Key Attributes
Model Number:
BAS40-05
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200mA
Reverse Leakage Current (Ir):
200mA
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40-05
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAS40/-04/-05/-06 is a series of Schottky Barrier Diodes in a SOT-23 plastic-encapsulated package. These diodes feature low forward voltage and fast switching speeds, making them suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Type: Schottky Barrier Diode
Technical Specifications
| Model | Marking | Peak Repetitive Peak Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Forward Continuous Current (IFM) | Power Dissipation (PD) | Junction Temperature (TJ) | Storage Temperature Range (TSTG) | Reverse Breakdown Voltage (V(BR)) @ IR=10A | Reverse Voltage Leakage Current (IR) @ VR=30V | Forward Voltage (VF) @ IF=1mA | Forward Voltage (VF) @ IF=40mA | Diode Capacitance (CD) @ VR=0,f=1MHz | Reverse Recovery Time (trr) @ Irr=1mA, IR=IF=10mA, RL=100 |
| BAS40 | 43 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
| BAS40-04 | 44 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
| BAS40-05 | 45 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
| BAS40-06 | 46 | 40 V | 40 V | 40 V | 200 mA | 200 mW | 125 | -55~+150 | 40 V | 200 nA | 380 mV | 1000 mV | 5 pF | 5 ns |
2410121340_JSCJ-BAS40-05_C10040.pdf
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