High Surge Current Schottky Rectifier JSCJ SBDB20H150CTB with Guard Ring Die Construction Protection

Key Attributes
Model Number: SBDB20H150CTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
1uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
870mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDB20H150CTB
Package:
TO-263-2L
Product Description

Product Overview

This Schottky Barrier Rectifier offers low power loss and high efficiency with excellent current capability and a low forward voltage drop. It features a Guard Ring Die Construction for transient protection, making it suitable for various power applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: SBDB20H150CTB
  • Package: TO-263-2L
  • Molding Compound: Solid dot = Green molding compound device (if none, the normal device)
  • Website: www.jscj-elec.com

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Peak repetitive reverse voltageVRRM150V
Working peak reverse voltageVRWM175V
DC blocking voltageVR150V
RMS reverse voltageVR(RMS)105V
Average rectified output currentIO20210A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSMTj = 25200A
Junction temperatureTj175
Storage temperatureTstg-55+175
Reverse voltageV(BR)IR=0.1mA150V
Reverse currentIRVR =150V, Tj =250.11.0mA
Forward voltageVFIF=10A, Tj =250.750.87V
Forward voltageVFIF=10A, Tj =1500.580.75V
Forward voltageVFIF=5A, Tj =250.650.82V
Forward voltageVFIF=5A, Tj =1500.500.65V
Thermal resistance from junction to ambientRJA62.5/W
Thermal resistance from junction to caseRJCTc=252.0/W
Total CapacitanceCTOTVR=4V, f = 1 MHz, Tj = 25200pF

2410121743_JSCJ-SBDB20H150CTB_C5295517.pdf

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