Schottky Barrier Diode JSCJ B5819W-G Plastic Encapsulated Device for Low Voltage Electronic Circuits
Key Attributes
Model Number:
B5819W-G
Product Custom Attributes
Reverse Leakage Current (Ir):
9A
Non-Repetitive Peak Forward Surge Current:
9A
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5819W-G
Package:
SOD-123
Product Description
Product Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD presents the SOD-123 Plastic-Encapsulated Schottky Barrier Diodes, series B5817W-5819W. These diodes are designed for low voltage, high frequency inverters, freewheeling, and polarity protection applications, offering efficient performance in demanding electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate
- Color: Green molding compound device (indicated by solid dot marking)
Technical Specifications
| Parameter | Symbol | B5817W | B5818W | B5819W | Unit | Test Conditions | Min | Max |
| Maximum Ratings and Electrical Characteristics, Single Diode | ||||||||
| Non-Repetitive Peak Reverse Voltage | VRM | 20 | 30 | 40 | V | @Ta=25 | ||
| Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 20 | 30 | 40 | V | @Ta=25 | ||
| RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | V | @Ta=25 | ||
| Average Rectified Output Current | IO | 1 | 1 | 1 | A | @Ta=25 | ||
| Repetitive Peak Forward Current | IFRM | 1.5 | 1.5 | 1.5 | A | @Ta=25 | ||
| Power Dissipation | Pd | 500 | 500 | 500 | mW | @Ta=25 | ||
| Thermal Resistance Junction to Ambient | RJA | 200 | 200 | 200 | /W | |||
| Non-repetitive Peak Forward Surge Current | IFSM | 9 | 9 | 9 | A | @t=8.3ms | ||
| ELECTRICAL CHARACTERISTICS | ||||||||
| Reverse breakdown voltage | V(BR) | 20 | 30 | 40 | V | IR= 1mA | ||
| Reverse voltage leakage current | IR | 1 | 1 | 1 | mA | VR=20V (B5817W), VR=30V (B5818W), VR=40V (B5819W) | ||
| Forward voltage | VF | 0.45 | 0.55 | 0.6 | V | IF=1A | ||
| 0.75 | 0.875 | 0.9 | IF=3A | |||||
| Diode capacitance | CD | 120 | 120 | 120 | pF | VR=4V, f=1MHz | ||
| Operating and Storage Conditions | ||||||||
| Storage Temperature | TSTG | -55 | -55 | -55 | -55 | +150 | ||
| Junction temperature | TJ | 125 | 125 | 125 | 125 | |||
| MARKING | ||||||||
| Marking | SJ | SK | SL | |||||
2410121257_JSCJ-B5819W-G_C164911.pdf
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