Switching diode JSCJ BAS21 offering fast switching speed operation and surface mount package design
Key Attributes
Model Number:
BAS21
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21
Package:
SOT-23
Product Description
Product Overview
The BAS21/A/C/S is a high-performance switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. Designed for general-purpose switching applications, it features fast switching speed, high conductance, and a surface mount package ideally suited for automatic insertion. This diode operates reliably within a wide temperature range.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23 Plastic-Encapsulate
- Marking: JS2 (BAS21A), JS3 (BAS21C), JS4 (BAS21S)
- Molding Compound: Solid dot = Green molding compound device, normal device if none
Technical Specifications
| Parameter | Symbol | BAS21/A/C/S (Min) | BAS21/A/C/S (Max) | Unit | Test Conditions |
| Repetitive peak reverse voltage | VRRM | 250 | V | ||
| Working peak reverse voltage | VRWM | 200 | V | ||
| DC blocking voltage | VR | 250 | V | ||
| Forward continuous current | IF | 250 | mA | @Ta=25 | |
| Average rectified output current | IO | 200 | mA | ||
| Repetitive peak forward surge current | IFSM | 625 | mA | @t=8.3ms | |
| Power dissipation | PD | 500 | mW | @Ta=25 | |
| Thermal resistance junction to ambient | RJA | 250 | /W | ||
| Junction temperature | TJ | -55 | +150 | ||
| Storage temperature range | TSTG | -55 | +150 | ||
| Reverse breakdown voltage | V(BR) | 250 | V | IR= 100A | |
| Reverse voltage leakage current | IR | 0.1 | A | VR=200V | |
| Forward voltage | VF | 1.000 | V | IF=100mA | |
| Forward voltage | VF | 1.250 | V | IF=200mA | |
| Diode capacitance | CD | 5 | pF | VR=0V, f=1MHz | |
| Reveres recovery time | trr | 50 | ns | IF=IR=30mA,Irr=0.1IR,RL=100 |
2410121245_JSCJ-BAS21_C68963.pdf
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