Low Forward Voltage Drop Schottky Barrier Rectifier Diode JSCJ SBDB20100TCTB for Power Rectification
Key Attributes
Model Number:
SBDB20100TCTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
160A
Reverse Leakage Current (Ir):
5uA@100V
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
720mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDB20100TCTB
Package:
TO-263-2L
Product Description
Product Overview
The SBDB20100TCTB is a Schottky Barrier Rectifier diode designed for high-efficiency applications. It features low power loss, high current capability, and a low forward voltage drop, making it suitable for various power rectification needs. The guard ring die construction provides transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Device Code: SBDB20100TCTB
- Package: TO-263-2L
- Molding Compound: Green molding compound device (if solid dot is present)
- Origin: China (implied by manufacturer)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Peak repetitive reverse voltage | VRRM | 100 | V | |||
| Working peak reverse voltage | VRWM | 100 | V | |||
| DC blocking voltage | VR | 100 | V | |||
| RMS reverse voltage | VR(RMS) | 70 | V | |||
| Average rectified output current | IO | 20 (2x10) | A | |||
| Non-Repetitive peak forward surge current | IFSM | 8.3ms half sine wave | 160 | A | ||
| Junction temperature | Tj | -55 | 150 | |||
| Storage temperature | Tstg | -55 | 150 | |||
| Reverse voltage breakdown | V(BR) | IR=1mA | 100 | V | ||
| Reverse current | IR | VR=100V | 5.0E-10 | 5.0E-7 | A | |
| Forward voltage | VF | IF=5A | 0.54 | 0.66 | V | |
| Forward voltage | VF | IF=10A | 0.62 | 0.72 | V | |
| Forward voltage | VF | IF=20A | 0.70 | V | ||
| Forward voltage | VF | @Ta=125, IF=20A | 0.62 | V | ||
| Junction temperature | Tj | 150 | ||||
| Thermal resistance junction to ambient | RJA | 62.5 | /W | |||
| Thermal resistance junction to case | RJC | Tc=25 | 2.0 | /W | ||
| Junction capacitance | CJ | VR=4V, f=1MHz (Per Diode) | 150 | pF |
2410121743_JSCJ-SBDB20100TCTB_C5295514.pdf
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