General purpose switching diode JSCJ BAS20 with surface mount package and fast switching capabilities
Key Attributes
Model Number:
BAS20
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@150V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS20
Package:
SOT-23
Product Description
Product Overview
The BAS19/BAS20 are high-performance switching diodes designed for general-purpose switching applications. They feature fast switching speeds, a surface mount package ideal for automatic insertion, and high conductance, making them suitable for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Marking: BAS19:JP, BAS20:JR
Technical Specifications
| Model | Repetitive Peak Reverse Voltage (VRRM) (V) | Working Peak Reverse Voltage (VRWM) (V) | Average Rectified Output Current (IO) (mA) | Non-Repetitive Peak Forward Surge Current (IFSM) @t= 2.5s (A) | Power Dissipation (Pd) (mW) | Junction Temperature (TJ) () | Storage Temperature (Tstg) () | Reverse Breakdown Voltage (V(BR)) (V) | Reverse Current (IR) (A) | Forward Voltage (VF) (V) | Diode Capacitance (CD) (pF) | Reverse Recovery Time (trr) (ns) |
| BAS19 | 120 | 100 | 200 | 2 | 250 | 150 | -55 ~ +150 | 120 (IR=100A) | 0.1 (VR=100V) | 1 (IF=100mA) | 5 (VR=0V, f=1MHz) | 50 (IF=IR=30mA,Irr=0.1*IR) |
| BAS20 | 200 | 150 | 200 | 2 | 250 | 150 | -55 ~ +150 | 200 (IR=100A) | 0.1 (VR=150V) | 1.25 (IF=200mA) | 5 (VR=0V, f=1MHz) | 50 (IF=IR=30mA,Irr=0.1*IR) |
2410121648_JSCJ-BAS20_C10039.pdf
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