High Current Schottky Rectifier JSCJ SBDF4060TCTB with Transient Protection and Low Forward Voltage
Key Attributes
Model Number:
SBDF4060TCTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Reverse Leakage Current (Ir):
80uA@60V
Voltage - DC Reverse (Vr) (Max):
60V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
520mV@20A
Current - Rectified:
40A
Mfr. Part #:
SBDF4060TCTB
Package:
TO-220F
Product Description
Product Overview
The SBD4060TCTB and SBDF4060TCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and low forward voltage drop, making them suitable for various power applications. The devices feature guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Codes: SBD4060TCTB, SBDF4060TCTB
- Material: Plastic-Encapsulate Diodes
- Marking: SBD4060TCTB XXXX (Device code), Solid dot = Green molding compound device (if none, the normal device)
Technical Specifications
| Parameter | Symbol | Test Conditions | SBD4060TCTB / SBDF4060TCTB | Unit |
| Peak repetitive reverse voltage | VRRM | 60 | V | |
| Working peak reverse voltage | VRWM | V | ||
| DC blocking voltage | VR | V | ||
| RMS reverse voltage | VR(RMS) | 42 | V | |
| Average rectified output current | IO | 40 (2x20) | A | |
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 250 | A | |
| Thermal resistance from junction to ambient | RJA | 2.0 | /W | |
| Thermal resistance from junction to case | RJc | Tc=25 | 3.0 | /W |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Reverse voltage | V(BR) | IR=1mA | 60 | V |
| Reverse current | IR | VR=60V | 0.50 | uA |
| Forward voltage | VF | IF=10A, Tj=25 | 0.43 | V |
| IF=20A, Tj=25 | 0.52 | |||
| Forward voltage | VF | IF=10A, Tj=125 | 0.36 | V |
| IF=20A, Tj=125 | 0.58 | |||
| Forward voltage (typ) | VF(typ) | @Tj=25 | 0.50 | V |
| @Tj=125 | 0.50 | |||
| Total Capacitance | CTOT | f=1MHz, Tj=25 | 150 | pF |
2410121810_JSCJ-SBDF4060TCTB_C2924087.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
