Surface mount ultra small diode JSCJ MMBD4448HSDW designed for fast switching and in electronic circuits
Key Attributes
Model Number:
MMBD4448HSDW
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
MMBD4448HSDW
Package:
SOT-363
Product Description
Product Overview
The MMBD4448HAQW/HADW/HCDW/HSDW/HTW/HCQW series are ultra-small surface mount diodes designed for general purpose switching applications. They offer fast switching speeds and high conductance, making them suitable for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-363
- Markings: MMBD4448HAQW (KAA), MMBD4448HADW (KA5), MMBD4448HCDW (KA6), MMBD4448HSDW (KA7), MMBD4448HTW (KAB), MMBD4448HCQW (KA4)
- Solid dot = Pin 1 indicate.
- Solid dot = Green molding compound device.
Technical Specifications
| Parameter | Symbol | MMBD4448HAQW/HADW/HCDW/HSDW/HTW/HCQW | Unit | Conditions |
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |
| Peak Repetitive Peak Reverse Voltage | VRRM | 80 | V | |
| Working Peak Reverse Voltage | VRWM | 80 | V | |
| DC Blocking Voltage | VR | 80 | V | |
| RMS Reverse Voltage | VR(RMS) | 57 | V | |
| Forward Continuous Current | IFM | 500 | mA | |
| Average Rectified Output Current | IO | 250 | mA | |
| Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | Pd | 200 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | |
| Operation Junction and Storage Temperature Range | TSTG | -55 ~+150 | ||
| Reverse Breakdown Voltage | V(BR) | 80 | V | IR=100A |
| Forward Voltage | VF1 | 0.62 / 0.72 | V | IF=5mA |
| Forward Voltage | VF2 | 0.855 | V | IF=10mA |
| Forward Voltage | VF3 | 1.0 | V | IF=100mA |
| Forward Voltage | VF4 | 1.25 | V | IF=150mA |
| Reverse Current | IR1 | 100 | nA | VR=70V |
| Reverse Current | IR2 | 25 | nA | VR=20V |
| Capacitance Between Terminals | CT | 3.5 | pF | VR=0V,f=1MHz |
| Reverse Recovery Time | trr | 4 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 |
2410121912_JSCJ-MMBD4448HSDW_C2910264.pdf
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