Schottky Barrier Diode JSCJ BAS70W-04 SOT-323 Plastic Encapsulated Fast Switching Low Voltage
Key Attributes
Model Number:
BAS70W-04
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Voltage - DC Reverse (Vr) (Max):
70V
Diode Configuration:
1 Pair Series Connection
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70W-04
Package:
SOT-323
Product Description
Product Overview
The BAS70W series are Schottky barrier diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for fast switching applications. They feature a low turn-on voltage and are available in a SOT-323 plastic-encapsulated package. Lead-free versions are also offered.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Packaging: SOT-323
- Certifications: Lead free version available
Technical Specifications
| Model | Marking | DC Voltage (VR) | Forward Continuous Current (IF) | Power Dissipation (PD) | Junction Temperature (TJ) | Reverse breakdown voltage (V(BR)) @ IR= 10A | Reverse voltage leakage current (IR) @ VR=50V | Forward voltage (VF) @ IF=1mA | Forward voltage (VF) @ IF=15mA | Diode capacitance (CD) @ VR=0V,f=1MHz | Reveres recovery time (trr) @ IF=IR=10mA,Irr=0.1xIR, RL=100 | Thermal Resistance (RJA) | Non-Repetitive Peak Forward Surge Current (IFSM) @ t = 8.3ms | Storage Temperature (Tstg) |
| BAS70W | K73 | 70 V | 70 mA | 200 mW | 125 | 70 V | 100 nA | 410 mV | 1000 mV | 2 pF | 5 ns | 500 /W | 100 mA | -55~+150 |
| BAS70W-04 | K74 | 70 V | 70 mA | 200 mW | 125 | 70 V | 100 nA | 410 mV | 1000 mV | 2 pF | 5 ns | 500 /W | 100 mA | -55~+150 |
| BAS70W-05 | K75 | 70 V | 70 mA | 200 mW | 125 | 70 V | 100 nA | 410 mV | 1000 mV | 2 pF | 5 ns | 500 /W | 100 mA | -55~+150 |
| BAS70W-06 | K76 | 70 V | 70 mA | 200 mW | 125 | 70 V | 100 nA | 410 mV | 1000 mV | 2 pF | 5 ns | 500 /W | 100 mA | -55~+150 |
2304140030_JSCJ-BAS70W-04_C77309.pdf
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