High Current Capability Diode JSCJ SBDD2060CT Schottky Barrier Rectifier with Low Forward Voltage Drop
Key Attributes
Model Number:
SBDD2060CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
100uA@60V
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
780mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDD2060CT
Package:
TO-252-2L
Product Description
Product Overview
The SBDD2060CT is a Schottky Barrier Rectifier designed for low power loss and high efficiency applications. It offers high current capability and a low forward voltage drop, making it suitable for various power supply and rectification circuits. The device features guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Model: SBDD2060CT
- Package: TO-252-2L Plastic-Encapsulate Diode
- Marking: D2060CT
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak repetitive reverse voltage | VRRM | 60 | V | |||
| Working peak reverse voltage | VRWM | V | ||||
| DC blocking voltage | VR | 60 | V | |||
| RMS reverse voltage | VR(RMS) | 42 | V | |||
| Average rectified output current | IO | 20 | A | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 150 | A | |||
| Thermal resistance from junction to ambient | RJA | 50 | /W | |||
| Junction temperature | Tj | 150 | ||||
| Storage temperature | Tstg | -55 | +150 | |||
| Reverse voltage | V(BR) | IR=0.1mA | 60 | V | ||
| Reverse current | IR | VR=60V | 10 | uA | ||
| Forward voltage | VF | IF=5A | 0.53 | 0.59 | V | |
| Forward voltage | VF | IF=5A (@Tj=125) | 0.62 | V | ||
| Forward voltage | VF | IF=10A | 0.71 | 0.78 | V | |
| Thermal resistance from junction to case | RJC | 0.5 | /W | |||
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25C | 150 | pF |
2410121814_JSCJ-SBDD2060CT_C513355.pdf
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