Plastic Encapsulated Switching Diode JSCJ BAS70-06 with Low Forward Voltage and High Speed Switching
Key Attributes
Model Number:
BAS70-06
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Reverse Recovery Time (trr):
5ns
Voltage - DC Reverse (Vr) (Max):
70V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70-06
Package:
SOT-23
Product Description
Product Overview
The BAS70 series are SOT-23 plastic-encapsulated switching diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. They feature a low turn-on voltage and fast switching speeds, making them suitable for various electronic applications. Lead-free versions are also available.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Color: Normal device (no solid dot) or Green molding compound device (solid dot)
Technical Specifications
| Model | Marking | DC Voltage (VR) (V) | Forward Continuous Current (IF) (mA) | Power Dissipation (PD) (mW) | Junction Temperature (TJ) (C) | Storage Temperature (Tstg) (C) | Reverse breakdown voltage (V(BR)) (V) | Reverse voltage leakage current (IR) (nA) | Forward voltage (VF) (mV) | Diode capacitance (CD) (pF) | Reveres recovery time (trr) (ns) | Thermal Resistance Junction to Ambient (RJA) (C/W) | Non-Repetitive Peak Forward Surge Current (IFSM) (mA) |
| BAS70 | 73 | 70 | 70 | 200 | 125 | -55~+150 | 70 | 100 | 410 (IF=1mA), 1000 (IF=15mA) | 2 (VR=0V, f=1MHz) | 5 (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 | 100 (@ t = 8.3ms) |
| BAS70-04 | 74 | 70 | 70 | 200 | 125 | -55~+150 | 70 | 100 | 410 (IF=1mA), 1000 (IF=15mA) | 2 (VR=0V, f=1MHz) | 5 (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 | 100 (@ t = 8.3ms) |
| BAS70-05 | 75 | 70 | 70 | 200 | 125 | -55~+150 | 70 | 100 | 410 (IF=1mA), 1000 (IF=15mA) | 2 (VR=0V, f=1MHz) | 5 (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 | 100 (@ t = 8.3ms) |
| BAS70-06 | 76 | 70 | 70 | 200 | 125 | -55~+150 | 70 | 100 | 410 (IF=1mA), 1000 (IF=15mA) | 2 (VR=0V, f=1MHz) | 5 (IF=IR=10mA, Irr=0.1xIR, RL=100) | 500 | 100 (@ t = 8.3ms) |
2410121248_JSCJ-BAS70-06_C77302.pdf
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