Compact SOD323 Package Schottky Diode JSCJ BAT54WS with Low Forward Voltage and Fast Switching
Key Attributes
Model Number:
BAT54WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
100mA
Mfr. Part #:
BAT54WS
Package:
SOD-323
Product Description
BAT54WS Schottky Barrier Diode
The BAT54WS is a Schottky barrier diode designed for extremely fast switching speeds and low forward voltage. Its compact SOD-323 package makes it suitable for various electronic applications requiring efficient rectification and signal processing.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: L9
- Package: SOD-323
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Non-Repetitive Peak Reverse Voltage | VRM | 30 | V | |||
| DC Blocking Voltage | VR | 21 | V | |||
| Average Rectified Output Current | IO | @Ta=25 | 100 | mA | ||
| Forward Continuous Current | IF | @Ta=25 | 200 | mA | ||
| Repetitive Peak Forward Current | IFRM | @Ta=25 | 300 | mA | ||
| Non-repetitive Peak Forward Surge Current | IFSM | @t=8.3ms, @Ta=25 | 600 | mA | ||
| Power Dissipation | PD | @Ta=25 | 200 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |||
| Operating Junction Temperature Range | TJ | -40 | 125 | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Reverse breakdown voltage | V (BR) | IR=100A | 30 | V | ||
| Forward voltage | VF1 | IF=0.1mA | 240 | mV | ||
| Forward voltage | VF2 | IF=1.0mA | 320 | mV | ||
| Forward voltage | VF3 | IF=10mA | 400 | mV | ||
| Forward voltage | VF4 | IF=30mA | 500 | mV | ||
| Forward voltage | VF5 | IF=100mA | 1000 | mV | ||
| Reverse current | IR | VR=25V, @Ta=25 | 2.0 | uA | ||
| Reverse recovery time | trr | IF=10mA, IR=10mA to 1mA, RL=100 | 5.0 | ns | ||
| Capacitance between terminals | CT | VR=1V,f=1MHz | 10 | pF |
2410121931_JSCJ-BAT54WS_C2991936.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
