Schottky Rectifier JSCJ SBDF30200CT with High Current Capability and Low Forward Voltage Drop Diode
Key Attributes
Model Number:
SBDF30200CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@200V
Non-Repetitive Peak Forward Surge Current:
200A
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
750mV@15A
Current - Rectified:
30A
Mfr. Part #:
SBDF30200CT
Package:
TO-220F
Product Description
Product Overview
The SBD30200CT and SBDF30200CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: SBD30200CT, SBDF30200CT
- Marking: 30200CT XXXX (SBD30200CT), SBD F30200CT (SBDF30200CT)
- Solid dot = Green molding compound device
- Material: Plastic-Encapsulate Diode
- Package Types: TO-220-3L, TO-220F
- Origin: China (implied by manufacturer name and URL)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD30200CT | SBDF30200CT |
| Peak repetitive reverse voltage | VRRM | 200 | V | 200 | 200 | |||
| Working peak reverse voltage | VRWM | 200 | V | 200 | 200 | |||
| DC blocking voltage | VR | 200 | V | 200 | 200 | |||
| RMS reverse voltage | VR(RMS) | 140 | V | 140 | 140 | |||
| Average rectified output current | IO | 30 | A | 30 | 30 | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 200 | A | 200 | 200 | |||
| Thermal resistance from junction to ambient | RJA | 62.5 | /W | 62.5 | ||||
| Thermal resistance from junction to case | RJc | Tc=25 | 3.0 | /W | 3.0 | 3.0 | ||
| Junction temperature | Tj | -55 | 150 | 150 | 150 | |||
| Storage temperature | Tstg | -55 | 150 | 150 | 150 | |||
| Reverse voltage | V(BR) | IR=1mA | 200 | V | 200 | 200 | ||
| Reverse current | IR | VR=200V | 100 | uA | 100 | 100 | ||
| Forward voltage | VF | IF=10A, Tj=25 | 0.82 | V | 0.82 | 0.82 | ||
| Forward voltage | VF | IF=15A, Tj=25 | 0.87 | V | 0.87 | 0.87 | ||
| Forward voltage | VF | IF=10A, Tj=125 | 0.71 | V | 0.71 | 0.71 | ||
| Forward voltage | VF | IF=15A, Tj=125 | 0.75 | V | 0.75 | 0.75 | ||
| Forward voltage | VF(typ) | @Tj=125 | 0.75 | V | 0.75 | 0.75 | ||
| Total Capacitance | CTOT | f=1MHz, Tj=25 | 300 | pF | 300 | 300 |
2410121815_JSCJ-SBDF30200CT_C5295542.pdf
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