High current Schottky Diode JSCJ SBD20150TA with plastic encapsulate and green molding compound option
Key Attributes
Model Number:
SBD20150TA
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
30uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
1.3V@20A
Current - Rectified:
20A
Mfr. Part #:
SBD20150TA
Package:
TO-220-3L
Product Description
Product Overview
The SBD20150TA and SBDF20150TA are Schottky Barrier Rectifiers designed for high efficiency and low power loss applications. They offer high current capability and a low forward voltage drop, making them suitable for various power supply and rectification circuits. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBD20150TA, SBDF20150TA
- Material: Plastic-Encapsulate Diode
- Color: Solid dot = Green molding compound device (if none, the normal device)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD20150TA | SBDF20150TA |
| Peak repetitive reverse voltage | VRRM | 150 | V | |||||
| Working peak reverse voltage | VRWM | 150 | V | |||||
| DC blocking voltage | VR | 150 | V | |||||
| RMS reverse voltage | VR(RMS) | 105 | V | |||||
| Average rectified output current | IO | 20 | A | |||||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 200 | A | |||||
| Thermal resistance from junction to ambient | RJA | 62.5 | /W | |||||
| Junction temperature | Tj | 150 | ||||||
| Storage temperature | Tstg | -55~+150 | ||||||
| Reverse voltage | V(BR) | IR = 1mA | 150 | V | ||||
| Reverse current | IR | VR = 150V, Tj = 25 | 5.0 | uA | ||||
| Reverse current | IR | VR = 150V, Tj = 125 | 0.74 | mA | ||||
| Forward voltage | VF | IF = 10A, Tj = 25 | 1.25 | 1.30 | V | |||
| Forward voltage | VF | IF = 20A, Tj = 25 | 0.84 | V | ||||
| Forward voltage | VF | IF = 20A, Tj = 125 | 0.63 | V | ||||
| Thermal resistance from junction to case | RJc | Tc=25 | 2.0 | 3.0 | /W | |||
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25 | 150 | pF |
2410121815_JSCJ-SBD20150TA_C5295497.pdf
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