Schottky Barrier Rectifier JSCJ SBDB10100CT with Low Forward Voltage Drop and High Current Capability

Key Attributes
Model Number: SBDB10100CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@100V
Non-Repetitive Peak Forward Surge Current:
120A
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
850mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBDB10100CT
Package:
TO-263-2L
Product Description

Product Overview

The SBDB10100CT is a Schottky Barrier Rectifier designed for low power loss and high efficiency applications. It offers high current capability and a low forward voltage drop, making it suitable for various power supply and rectification circuits. The device features guard ring die construction for transient protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: SBDB10100CT
  • Package Type: TO-263-2L
  • Material: Plastic-Encapsulate Diode
  • Marking: SBDB10100CT = Device code, Solid dot = Green molding compound device if none, the normal device, XXXX = Code
  • Origin: China (implied by manufacturer name and website)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Peak repetitive reverse voltageVRRM100V
Working peak reverse voltageVRWM100V
DC blocking voltageVR100V
RMS reverse voltageVR(RMS)70V
Average rectified output currentIO10A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM150A
Junction temperatureTj-55+150
Storage temperatureTstg-55+150
Reverse voltageV(BR)IR=0.1mA100V
Reverse currentIRVR=100V0.57mA
Forward voltageVFIF=3A0.630.71V
Forward voltageVFIF=5A0.770.85V
Thermal resistance from junction to ambientRJA62.5/W
Thermal resistance from junction to caseRJCTc=252.0/W
Total CapacitanceCTOTVR=10V, f=1MHz150pF

2410121849_JSCJ-SBDB10100CT_C5295511.pdf

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