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quality High precision JSCJ BZT52C5V1S W8 Zener diode with planar die construction and ceramic PCB packaging factory
quality High precision JSCJ BZT52C5V1S W8 Zener diode with planar die construction and ceramic PCB packaging factory

High precision JSCJ BZT52C5V1S W8 Zener diode with planar die construction and ceramic PCB packaging

Key Attributes
Model Number: BZT52C5V1S W8
Product Custom Attributes
Impedance(Zzt):
60Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.8V~5.4V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
5.1V
Impedance(Zzk):
480Ω
Mfr. Part #:
BZT52C5V1S W8
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V4S-BZT52C39S series are Zener diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, featuring planar die construction and 200mW power dissipation on a ceramic PCB. These general-purpose, medium-current diodes are ideally suited for automated assembly processes and are available in a lead-free version. They are designed for applications requiring precise voltage regulation.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package Type: SOD-323
  • Encapsulation: Plastic
  • Lead Free Version: Available

Technical Specifications

Type Marking Zener Voltage (Nominal) Zener Voltage (Min) Zener Voltage (Max) Test Current (IZT) Zener Impedance (ZZT @ IZT) Reverse Current (IR @ VR) Power Dissipation (PD) Junction Temperature (Tj) Storage Temperature Range (Tstg)
BZT52C2V4S WX 2.4 V 2.20 V 2.60 V 5 mA 600 50 A @ 1.0 V 200 mW 150 -55~+150
BZT52C2V7S W1 2.7 V 2.5 V 2.9 V 5 mA 600 20 A @ 1.0 V 200 mW 150 -55~+150
BZT52C3V0S W2 3.0 V 2.8 V 3.2 V 5 mA 600 10 A @ 1.0 V 200 mW 150 -55~+150
BZT52C3V3S W3 3.3 V 3.1 V 3.5 V 5 mA 600 5 A @ 1.0 V 200 mW 150 -55~+150
BZT52C3V6S W4 3.6 V 3.4 V 3.8 V 5 mA 600 5 A @ 1.0 V 200 mW 150 -55~+150
BZT52C3V9S W5 3.9 V 3.7 V 4.1 V 5 mA 600 3 A @ 1.0 V 200 mW 150 -55~+150
BZT52C4V3S W6 4.3 V 4.0 V 4.6 V 5 mA 600 3 A @ 1.0 V 200 mW 150 -55~+150
BZT52C4V7S W7 4.7 V 4.4 V 5.0 V 5 mA 500 3 A @ 2.0 V 200 mW 150 -55~+150
BZT52C5V1S W8 5.1 V 4.8 V 5.4 V 5 mA 480 2 A @ 2.0 V 200 mW 150 -55~+150
BZT52C5V6S W9 5.6 V 5.2 V 6.0 V 5 mA 400 1 A @ 2.0 V 200 mW 150 -55~+150
BZT52C6V2S WA 6.2 V 5.8 V 6.6 V 5 mA 150 3 A @ 4.0 V 200 mW 150 -55~+150
BZT52C6V8S WB 6.8 V 6.4 V 7.2 V 5 mA 80 2 A @ 4.0 V 200 mW 150 -55~+150
BZT52C7V5S WC 7.5 V 7.0 V 7.9 V 5 mA 80 1 A @ 5.0 V 200 mW 150 -55~+150
BZT52C8V2S WD 8.2 V 7.7 V 8.7 V 5 mA 80 0.7 A @ 5.0 V 200 mW 150 -55~+150
BZT52C9V1S WE 9.1 V 8.5 V 9.6 V 5 mA 100 0.5 A @ 6.0 V 200 mW 150 -55~+150
BZT52C10S WF 10 V 9.4 V 10.6 V 5 mA 150 0.2 A @ 7.0 V 200 mW 150 -55~+150
BZT52C11S WG 11 V 10.4 V 11.6 V 5 mA 150 0.1 A @ 8.0 V 200 mW 150 -55~+150
BZT52C12S WH 12 V 11.4 V 12.7 V 5 mA 150 0.1 A @ 8.0 V 200 mW 150 -55~+150
BZT52C13S WI 13 V 12.4 V 14.1 V 5 mA 170 0.1 A @ 8.0 V 200 mW 150 -55~+150
BZT52C15S WJ 15 V 13.8 V 15.6 V 5 mA 200 0.1 A @ 10.5 V 200 mW 150 -55~+150
BZT52C16S WK 16 V 15.3 V 17.1 V 5 mA 200 0.1 A @ 11.2 V 200 mW 150 -55~+150
BZT52C18S WL 18 V 16.8 V 19.1 V 5 mA 225 0.1 A @ 12.6 V 200 mW 150 -55~+150
BZT52C20S WM 20 V 18.8 V 21.2 V 5 mA 225 0.1 A @ 14.0 V 200 mW 150 -55~+150
BZT52C22S WN 22 V 20.8 V 23.3 V 5 mA 250 0.1 A @ 15.4 V 200 mW 150 -55~+150
BZT52C24S WO 24 V 22.8 V 25.6 V 5 mA 250 0.1 A @ 16.8 V 200 mW 150 -55~+150
BZT52C27S WP 27 V 25.1 V 28.9 V 2 mA 300 0.1 A @ 18.9 V 200 mW 150 -55~+150
BZT52C30S WQ 30 V 28.0 V 32.0 V 2 mA 300 0.1 A @ 21.0 V 200 mW 150 -55~+150
BZT52C33S WR 33 V 31.0 V 35.0 V 2 mA 325 0.1 A @ 23.1 V 200 mW 150 -55~+150
BZT52C36S WS 36 V 34.0 V 38.0 V 2 mA 350 0.1 A @ 25.2 V 200 mW 150 -55~+150
BZT52C39S WT 39 V 37.0 V 41.0 V 2 mA 350 0.1 A @ 27.3 V 200 mW 150 -55~+150

Maximum Ratings

Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ IF = 10mA VF 0.9 V
Power Dissipation (Note 1) PD 200 mW
Thermal Resistance from Junction to Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~+150

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.


2410121440_JSCJ-BZT52C5V1S-W8_C2118.pdf

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