Plastic Encapsulated JSCJ RB706F-40 Schottky Diode SOT-323 Package Low Reverse Current Component
Key Attributes
Model Number:
RB706F-40
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200mA
Reverse Leakage Current (Ir):
1uA@10V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB706F-40
Package:
SOT-323
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD RB706F-40 is a Schottky Barrier Diode housed in a SOT-323 plastic-encapsulated package. It offers advantages such as a small package size, low forward voltage (VF), low reverse current (IR), and high reliability, making it suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: RB706F-40
- Package Type: SOT-323
- Material: Plastic-Encapsulated
- Molding Compound: Green molding compound device (if solid dot is present)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Limit / Conditions | Unit |
| Peak reverse voltage | VRM | 45 | V |
| DC reverse voltage | VR | 40 | V |
| Mean rectifying current | IO | 30 | mA |
| Non-repetitive Peak Forward Surge Current @ t=8.3ms | IFSM | 200 | mA |
| Power dissipation | PD | 200 | mW |
| Junction temperature | Tj | 125 | |
| Storage temperature | Tstg | -55 to +150 | |
| Forward voltage | VF | 0.37 (Typ) | V @ IF=1mA |
| Reverse current | IR | 1 (Typ) | A @ VR=10V |
| Capacitance between terminals | CT | 2 (Typ) | pF @ VR=1V, f=1MHz |
| Thermal Resistance Junction to Ambient | RJA | 500 | /W |
2410121228_JSCJ-RB706F-40_C77351.pdf
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