Schottky Barrier Diode JSCJ SD101AW with 60 Volt Peak Repetitive Reverse Voltage and Low Forward Drop
Key Attributes
Model Number:
SD101AW
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@50V
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101AW
Package:
SOD-123
Product Description
SD101AW SCHOTTKY BARRIER DIODE
The SD101AW is a Schottky barrier diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for various electronic applications. It features a low forward voltage drop, guard ring construction for transient protection, and negligible reverse recovery time, making it suitable for applications requiring fast switching and low power loss.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOD-123
- Encapsulation: Plastic
- Marking: S1
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak Repetitive Peak Reverse Voltage | VRRM | 60 | V | |
| Working Peak Reverse Voltage | VRWM | 60 | V | |
| DC Blocking Voltage | VR | 60 | V | |
| RMS Reverse Voltage | VR(RMS) | 42 | V | |
| Forward Continuous Current | IFM | 15 | mA | |
| Repetitive Peak Forward Current @t<1.0s | IFRM | 50 | mA | |
| Repetitive Peak Forward Current @t=10s | IFRM | 2.0 | A | |
| Power Dissipation | Pd | 400 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 250 | /W | |
| Reverse breakdown voltage | VR | 60 | V | IR=10A |
| Forward voltage | VF | 0.41 | V | IF=1.0mA |
| Forward voltage | VF | 1.00 | V | IF=15mA |
| Reverse current | IRM | 0.2 | A | VR=50V |
| Capacitance between terminals | CT | 2.0 | pF | VR=0V,f=1.0MHz |
| Reverse recovery time | trr | 1.0 | ns | IF=IR=5mA Irr=0.1XIR,RL=100 |
| Storage Temperature | TSTG | -55~+150 | ||
| Junction temperature | Tj | 125 |
2410121237_JSCJ-SD101AW-_C21543.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
