Fast switching plastic encapsulated diode JSCJ BAV99T designed for switching in electronic circuits

Key Attributes
Model Number: BAV99T
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
85V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
75mA
Mfr. Part #:
BAV99T
Package:
SOT-523
Product Description

Product Overview

The BAW56T/BAV70T/BAV99T are high-performance switching diodes designed for general-purpose switching applications. They feature fast switching speeds and high conductance, making them suitable for various electronic circuits.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Material: Plastic-Encapsulated Diode
  • Color: Green molding compound device (indicated by solid dot)

Technical Specifications

ParameterSymbolBAW56T/BAV70T/BAV99TUnitConditions
Reverse VoltageVR85V
VR75VIR= 1A
VR25VIR= 0.03A
VR0Vf=1MHz
Forward CurrentIF75mA
IF1mAVF
IF10mAVF
IF50mAVF
IF150mAVF
Forward Surge CurrentIFSM2.0A@t=8.3ms Non-Repetitive Peak
Power DissipationPD150mW@Ta=25
PDmWPower Derating Curve
Thermal ResistanceRJA833/WJunction to Ambient
Junction TemperatureTJ150
Storage Temperature rangeTSTG-55~+150
Reverse breakdown voltageV(BR)85VIR= 1A
IR12AVR=75V
Reverse voltage leakage currentIR20.03AVR=25V
Forward voltageVFmVIF=1mA
VFmVIF=10mA
VFmVIF=50mA
VFmVIF=150mA
Diode capacitanceCD1.5pFVR=0 f=1MHz
Reverse recovery timetrr4nsIF=IR=10mA Irr=0.1IR,RL=100

2410121308_JSCJ-BAV99T_C68988.pdf

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