Plastic Encapsulated Switching Diode JSCJ BAV19W with SOD123 Package and Low Reverse Current Feature

Key Attributes
Model Number: BAV19W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1.7A
Reverse Leakage Current (Ir):
100nA@100V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV19W
Package:
SOD-123
Product Description

Product Overview

The BAV19W~BAV21W are SOD-123 plastic-encapsulated switching diodes designed for general-purpose switching applications. They feature low reverse current, fast switching speed, and a surface mount package ideally suited for automatic insertion. These diodes are suitable for various general-purpose switching tasks.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package Type: SOD-123
  • Encapsulation: Plastic
  • Marking: BAV19W: A8, BAV20W: T2, BAV21W: T3

Technical Specifications

ParameterSymbolBAV19WBAV20WBAV21WUnit
Non-Repetitive Peak Reverse VoltageVRM120200250V
Peak Repetitive Reverse Voltage / Working Peak Reverse VoltageVRRM / VRWM100150200V
RMS Reverse VoltageVR(RMS)71106141V
Average Rectified Output CurrentIO200mA
Non-repetitive Peak Forward Surge Current @ t=8.3msIFSM1.7A
Power DissipationPD500mW
Thermal Resistance from Junction to AmbientRJA250/W
Junction TemperatureTj150
Storage TemperatureTstg-55~+150
Reverse current (VR=100V)IR0.1--uA
Reverse current (VR=150V)IR-0.1-uA
Reverse current (VR=200V)IR--0.1uA
Forward voltage (IF=100mA)VF1V
Forward voltage (IF=200mA)VF1.25V
Total capacitance (VR=0V,f=1MHz)Ctot5pF
Reverse recovery time (IF= IR =30mA, Irr=0.1*IR , RL=100)trr50ns

2410121626_JSCJ-BAV19W_C14887.pdf

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