Low forward voltage drop Schottky diode JSCJ SBDF40150TCTB designed for power electronics performance
Key Attributes
Model Number:
SBDF40150TCTB
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@150V
Non-Repetitive Peak Forward Surge Current:
250A
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
1.1V@20A
Current - Rectified:
30A
Mfr. Part #:
SBDF40150TCTB
Package:
TO-220F
Product Description
Product Overview
The SBD40150TCTB and SBDF40150TCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. The devices feature guard ring construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate Diode
- Color: Solid dot = Green molding compound device (if none, the normal device)
Technical Specifications
| Symbol | Parameter | Test conditions | SBD 40150TCTB | SBDF 40150TCTB | Unit |
| VRRM | Peak repetitive reverse voltage | 150 | 150 | V | |
| VRWM | Working peak reverse voltage | 150 | 150 | V | |
| VR | DC blocking voltage | 150 | 150 | V | |
| VR(RMS) | RMS reverse voltage | 105 | 105 | V | |
| IO | Average rectified output current | 30 | 30 | A | |
| IFSM | Non-Repetitive peak forward surge current (8.3ms half sine wave) | 250 | 250 | A | |
| RJA | Thermal resistance from junction to ambient | 62.5 | 62.5 | /W | |
| RJc | Thermal resistance from junction to case | Tc=25 | 2.0 | 3.0 | /W |
| Tj | Junction temperature | 150 | 150 | ||
| Tstg | Storage temperature | -55~+150 | -55~+150 | ||
| V(BR) | Reverse voltage | IR=0.1mA | 150 | 150 | V |
| IR | Reverse current | VR =150V | 0.1 | 0.1 | mA |
| VF | Forward voltage | IF=10A, Tj=25 | 1.01 | 1.01 | V |
| VF | Forward voltage | IF=20A, Tj=25 | 1.1 | 1.1 | V |
| VF(typ) | Forward voltage | @Tj=125 | 0.69 | 0.69 | V |
2410121815_JSCJ-SBDF40150TCTB_C5295546.pdf
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