Schottky Diode JSCJ SBD40H150CTB with 150 Volt Peak Reverse Voltage and Guard Ring Die Construction
Key Attributes
Model Number:
SBD40H150CTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
300A
Reverse Leakage Current (Ir):
500nA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
830mV@20A
Current - Rectified:
40A
Mfr. Part #:
SBD40H150CTB
Package:
TO-220-3L
Product Description
SBD40H150CTB, SBDF40H150CTB SCHOTTKY BARRIER RECTIFIER
The SBD40H150CTB and SBDF40H150CTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. The devices feature Guard Ring Die Construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Codes: SBD40H150CTB, SBDF40H150CTB
- Construction: Guard Ring Die Construction
- Packaging: TO-220-3L / TO-220F Plastic-Encapsulate Diode
- Marking: SBD40H150CTB XXXX, SBD(F)40H150CTB = Device code, Solid dot = Green molding compound device if none, the normal device, XXXX = Code
Technical Specifications
| Parameter | Symbol | Test Conditions | SBD40H150CTB / SBDF40H150CTB | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 150 | V | |
| Working Peak Reverse Voltage | VRWM | 150 | V | |
| DC Blocking Voltage | VR | 150 | V | |
| RMS Reverse Voltage | VR(RMS) | 105 | V | |
| Average Rectified Output Current | IO | 40 | A | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 8.3ms half sine wave | 300 | A |
| Reverse Voltage Breakdown | V(BR) | IR = 1mA | 150 | V |
| Forward Voltage | VF | IF = 10A, Tj = 25 | 0.83 | V |
| Forward Voltage | VF | IF = 10A, Tj = 150 | 0.78 | V |
| Forward Voltage | VF | IF = 20A, Tj = 25 | 0.88 | V |
| Forward Voltage | VF | IF = 20A, Tj = 150 | 0.83 | V |
| Reverse Current | IR | VR = 150V, Tj = 25 | 0.1 | mA |
| Reverse Current | IR | VR = 150V, Tj = 150 | 10 | mA |
| Thermal Resistance Junction to Ambient | RJA | 75 | /W | |
| Thermal Resistance Junction to Case | RJc | TC = 25 | 2.0 | /W |
| Junction Temperature | Tj | 175 | ||
| Storage Temperature | Tstg | -55~+175 | ||
| Total Capacitance | CTOT | VR = 10V, f = 1MHz, Tj = 25 | 40 | pF |
2410121815_JSCJ-SBD40H150CTB_C5295509.pdf
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