High current capability Schottky Barrier Rectifier JSCJ SBD30120TCTB with Guard Ring Die Construction
Product Overview
The SBD30120TCTB and SBDF30120TCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency applications. They feature high current capability and low forward voltage drop, making them suitable for various power supply and switching applications. The devices utilize a Guard Ring Die Construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: SBD30120TCTB XXXX (Solid dot indicates Green molding compound device)
- Package: TO-220-3L/TO-220F Plastic-Encapsulate Diode
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD30120TCTB (TO-220-3L) | SBDF30120TCTB (TO-220F) |
| Peak Repetitive Reverse Voltage | VRRM | 120 | V | ✔ | ✔ | |||
| Working Peak Reverse Voltage | VRWM | 120 | V | ✔ | ✔ | |||
| DC Blocking Voltage | VR | 120 | V | ✔ | ✔ | |||
| RMS Reverse Voltage | VR(RMS) | 84 | V | ✔ | ✔ | |||
| Average Rectified Output Current | IO | 30 | A | ✔ | ✔ | |||
| Non-Repetitive Peak Forward Surge Current (8.3ms half sine wave) | IFSM | 200 | A | ✔ | ✔ | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | ✔ | ||||
| Thermal Resistance Junction to Case | RJc | Tc=25 | 2.0 | 3.0 | /W | ✔ | ||
| Junction Temperature | Tj | 150 | ✔ | ✔ | ||||
| Storage Temperature | Tstg | -55 | +150 | ✔ | ✔ | |||
| Forward Voltage | VF | IF=10A, Tj=25 | 0.68 | 0.83 | V | ✔ | ✔ | |
| IF=15A, Tj=25 | 0.69 | 0.89 | V | ✔ | ✔ | |||
| IF=10A, Tj=125 | 0.61 | V | ✔ | ✔ | ||||
| IF=15A, Tj=125 | 0.61 | V | ✔ | ✔ | ||||
| Reverse Current | IR | VR=120V, Tj=25 | 0.001 | 0.1 | mA | ✔ | ✔ | |
| VR=120V, Tj=125 | 0.1 | 1.0 | mA | ✔ | ✔ |
2410121815_JSCJ-SBD30120TCTB_C5295504.pdf
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