Schottky diode JSCJ SD101BW with low forward voltage drop and negligible reverse recovery in SOD 123
Key Attributes
Model Number:
SD101BW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
200nA@40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward(Vf@If):
950mV@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101BW
Package:
SOD-123
Product Description
Product Overview
The SD101BW is a Schottky barrier diode featuring low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. It is housed in an ultra-small surface mount package (SOD-123).
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: S2
- Package: SOD-123
- Molding Compound: Green (if solid dot present)
- Origin: China (implied by manufacturer)
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 50 | V | |
| Working Peak Reverse Voltage | VRWM | V | ||
| DC Blocking Voltage | VR | 50 | V | |
| RMS Reverse Voltage | VR(RMS) | 35 | V | |
| Forward Continuous Current | IFM | 15 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | @t=8.3ms | 2 | A |
| Power Dissipation | PD | Ta=25 | 400 | mW |
| Thermal Resistance Junction to Ambient | RJA | 250 | /W | |
| Operating Junction Temperature Range | Tj | -40 ~ +125 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||
| Reverse Voltage (Breakdown) | V(BR) | IR=10A | 50 | V |
| Reverse Current | IR | VR=40V | 0.2 | A |
| Forward Voltage | VF | IF=1mA | 0.40 | V |
| Forward Voltage | VF | IF=15mA | 0.95 | V |
| Total Capacitance | Ctot | VR=0V,f=1MHz | 2.1 | pF |
| Reverse Recovery Time | trr | IF=5mA, IR=5mA, Irr=0.1IR, RL=100 | 1 | ns |
2410121931_JSCJ-SD101BW_C3031899.pdf
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