Super Fast Recovery Rectifier Diode JSCJ ES1JF with 150V Peak Reverse Voltage and 1A Forward Current

Key Attributes
Model Number: ES1JF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@600V
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
ES1JF
Package:
DO-214AD
Product Description

Product Overview

The ES1AF through ES1JF series are Super Fast Recovery Rectifier Diodes designed for high-speed switching applications. They offer high surge current capability and are suitable for rectification and general-purpose use.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: ES1X X : From A To J
  • Polarity: Color band denotes cathode
  • Package: SMAF Plastic-Encapsulate Diodes
  • Origin: China (implied by brand and website)

Technical Specifications

ItemSymbolUnitTest ConditionsES1AF-ES1DFES1EF-ES1GFES1HF-ES1JF
Repetitive Peak Reverse VoltageVRRMV50100150
Average Forward CurrentIF(AV)A1.01.01.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave, 1 cycle, Ta=25303030
Peak Forward VoltageVFVIF =1.0A0.951.251.70
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr A VRM=VRRM353535
Peak Reverse CurrentIRRM1AVRRM, Ta =25100100100
Peak Reverse CurrentIRRM2AVRRM, Ta =100150150150
Maximum RMS VoltageVRMSV3570105
Thermal Resistance(Typical)R J-A /WBetween junction and ambient (P.C.B. Mounted on 0.2" x 0.2" copper pad areas)858585
Thermal Resistance(Typical)R J-L /WBetween junction and terminal353535
Operation Junction and Storage Temperature RangeTJ,TSTG-55 ~ +150-55 ~ +150-55 ~ +150

2410121810_JSCJ-ES1JF_C2923907.pdf

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