Automotive Schottky Diode JSCJ AD-RB551V-40 Plastic Encapsulated with Low Forward Voltage and AEC Q101 Qualification
Key Attributes
Model Number:
AD-RB551V-40
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100uA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
470mV
Current - Rectified:
500mA
Mfr. Part #:
AD-RB551V-40
Package:
SOD-323
Product Description
Product Overview
The AD-RB551V-40 is a Schottky barrier diode from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It is designed for high-frequency rectification and switching regulator applications, offering low forward voltage (VF) and AEC-Q101 qualification for automotive use. The device is encapsulated in plastic and features a marking bar to indicate the cathode.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Model: AD-RB551V-40
- Material: Plastic-Encapsulated Diode
- Certifications: AEC-Q101 qualified
- Origin: China
- Marking: D4 = Device code (marking bar indicates cathode)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Peak reverse voltage | VRM | 40 | V | |||
| Continuous forward current | IO | 500 | mA | |||
| Non-repetitive peak forward surge current | IFSM | @ t = 8.3ms | 2 | A | ||
| Power dissipation | PD | 200 | mW | |||
| Thermal resistance from junction to ambient | RJA | 1) | 500 | C/W | ||
| Operating junction temperature range | Tj | -40 | 125 | C | ||
| Storage temperature range | Tstg | -55 | 150 | C | ||
| Forward voltage | VF | IF = 500mA | 0.47 | V | ||
| Reverse voltage | VBR | IR = 0.1mA | 40 | V | ||
| Reverse current | IR | VR = 40V | 0.1 | mA |
1) Measured with the device mounted on 1 inch2 FR-4 board with 1oz. single-side copper, in a still air environment with Ta = 25.
2410121931_JSCJ-AD-RB551V-40_C2975680.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
