High Current Capability Power Rectifier JSCJ SBDF30100SCTB Schottky Barrier Type with Guard Ring Die
Key Attributes
Model Number:
SBDF30100SCTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
100uA@100V
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
670mV@15A
Current - Rectified:
30A
Mfr. Part #:
SBDF30100SCTB
Package:
TO-220F
Product Description
Product Overview
The SBD30100SCTB and SBDF30100SCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for applications requiring efficient power conversion. The devices feature a guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: SBD30100SCTB XXXX (Device code), Solid dot (Green molding compound device if present)
- Origin: China (implied by company name and website)
- Material: Plastic-Encapsulate Diodes
Technical Specifications
| Parameter | Symbol | Test Conditions | SBD30100SCTB | SBDF30100SCTB | Unit |
| Peak repetitive reverse voltage | VRRM | 100 | 100 | V | |
| Working peak reverse voltage | VRWM | 100 | 100 | V | |
| DC blocking voltage | VR | 100 | 100 | V | |
| RMS reverse voltage | VR(RMS) | 70 | 70 | V | |
| Average rectified output current | IO | 30 | 30 | A | |
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 200 | 200 | A | |
| Reverse voltage | V(BR) | IR=1mA | 100 | 100 | V |
| Reverse current | IR | VR=100V | 0.5 | 0.5 | uA |
| Forward voltage | VF | IF=10A, Tj=25 | 0.58 | 0.58 | V |
| Forward voltage | VF | IF=10A, Tj=125 | 0.56 | 0.56 | V |
| Forward voltage | VF | IF=15A, Tj=25 | 0.67 | 0.67 | V |
| Forward voltage | VF | IF=15A, Tj=125 | 0.63 | 0.63 | V |
| Thermal resistance from junction to ambient | RJA | 62.5 | /W | ||
| Thermal resistance from junction to case | RJc | Tc=25 | 2.0 | 3.0 | /W |
| Junction temperature | Tj | 150 | 150 | ||
| Storage temperature | Tstg | -55~+150 | -55~+150 |
| Parameter | Symbol | Conditions | Typ | Unit |
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25 | 500 | pF |
2410121810_JSCJ-SBDF30100SCTB_C2924081.pdf
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