High Surge Current Plastic Encapsulated Rectifier Diode JSCJ ES2G with 400 Volt Peak Reverse Voltage

Key Attributes
Model Number: ES2G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA@400V
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
400V
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.25V@2A
Current - Rectified:
2A
Mfr. Part #:
ES2G
Package:
SMAG
Product Description

Product Overview

The ES2X series are Super Fast Recovery Rectifier Diodes designed for high surge current capability. These plastic-encapsulated diodes are suitable for rectifier applications and offer a voltage range from 50V to 600V.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Material: Plastic-Encapsulate
  • Marking: Color band denotes cathode

Technical Specifications

ItemSymbolUnitTest ConditionsES2AES2BES2CES2DES2EES2GES2HES2J
Maximum RMS VoltageVRMV50100150200300400500600
Repetitive Peak Reverse VoltageVRRMV50100150200300400500600
Average Forward CurrentIF(AV)A60Hz Half-sine wave, Resistance load, Ta=1102.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave, 1 cycle, Ta=2535
Operation Junction and Storage Temperature RangeTJ,TSTG -55 ~ +150
Peak Forward VoltageVFVIF =2.0A0.50.50.50.50.950.950.950.95
Peak Forward VoltageVFVIF =0.5A0.40.40.40.40.40.40.40.4
Peak Reverse CurrentIRRM1AVRM=VRRM, Ta =251.0
Peak Reverse CurrentIRRM2AVRM=VRRM, Ta =10010
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr =0.25A35
Thermal Resistance(Typical)RJ-A/ WBetween junction and ambient75
Thermal Resistance(Typical)RJ-L/ WBetween junction and terminal2.0

2410121810_JSCJ-ES2G_C2923938.pdf

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