Schottky Barrier Diode JSCJ BAT54W with Low Forward Voltage and High Speed Switching Capabilities
Key Attributes
Model Number:
BAT54W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
21V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
100mA
Mfr. Part #:
BAT54W
Package:
SOD-123
Product Description
Product Overview
The BAT54W is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features a low forward voltage drop, fast switching speed, and a PN junction guard ring for transient and ESD protection. Available in a lead-free version, this diode is suitable for various electronic applications requiring efficient rectification and protection.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: BAT54W
- Package: SOD-123
- Marking: L9
- Molding Compound: Green (if solid dot present)
- Lead Free Version: Available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| DC blocking voltage | VR | 30 | V | |||
| RMS reverse voltage | VR(RMS) | 21 | V | |||
| Average rectified output current | Io | 100 | mA | |||
| Forward continuous current | IF | 200 | mA | |||
| Repetitive peak forward current | IFRM | 300 | mA | |||
| Non-repetitive Peak Forward Surge Current | IFSM | @t=8.3ms | 600 | mA | ||
| Power dissipation | Pd | 500 | mW | |||
| Junction temperature | TJ | 125 | ||||
| Storage temperature range | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Reverse breakdown voltage | V(BR) | IR=100A | 30 | V | ||
| Forward voltage | VF1 | IF=0.1mA | 240 | mV | ||
| VF2 | IF=1.0mA | 320 | mV | |||
| VF3 | IF=10mA | 400 | mV | |||
| VF4 | IF=30mA | 500 | mV | |||
| VF5 | IF=100mA | 1000 | mV | |||
| Reverse current | IR | VR=25V | 2.0 | uA | ||
| Reverse recovery time | trr | IF=10mA, IR=10mA to 1mA , RL=100 | 5.0 | ns | ||
| Capacitance between terminals | CT | VR=1V,f=1MHz | 10 | pF | ||
| Thermal resistance junction to ambient | RJA | 200 | /W | |||
2410121216_JSCJ-BAT54W_C131469.pdf
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