Schottky Barrier Rectifier JSCJ SBDF20H200CT Low Forward Voltage Drop High Current Capability Device

Key Attributes
Model Number: SBDF20H200CT
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@200V
Non-Repetitive Peak Forward Surge Current:
200A
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
950mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDF20H200CT
Package:
TO-220F
Product Description

Product Overview

The SBD20H200CT and SBDF20H200CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. The devices feature guard ring die construction for transient protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: SBD20H200CT XXXX, SBD(F)20H200CT XXXX
  • Material: Plastic-Encapsulate Diode
  • Color: Solid dot = Green molding compound device if none, the normal device

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnitSBD20H200CTSBDF20H200CT
Peak repetitive reverse voltageVRRM200V
Working peak reverse voltageVRWM200V
DC blocking voltageVR200V
RMS reverse voltageVR(RMS)140V
Average rectified output currentIO20A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM200A
Reverse voltageV(BR)IR=1mA200V
Reverse currentIRVR=200V, Tj=250.5uA
Reverse currentIRVR=200V, Tj=15050uA
Forward voltageVFIF=10A, Tj=250.80V
Forward voltageVFIF=10A, Tj=1500.72V
Forward voltageVFIF=20A, Tj=250.86V
Forward voltageVFIF=20A, Tj=1500.75V
Thermal resistance from junction to ambientRJA50/W
Thermal resistance from junction to caseRJcTc=252.0/W
Junction temperatureTj-55175
Storage temperatureTstg-55175

2410121815_JSCJ-SBDF20H200CT_C5295533.pdf

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