Rectifier diode JSCJ 1N4001 with 50 volt voltage rating and 1 amp average forward current capability
Key Attributes
Model Number:
1N4001
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@50V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Mfr. Part #:
1N4001
Package:
DO-41
Product Description
Product Overview
The 1N4001 THRU 1N4007 series are general-purpose rectifier diodes in a DO-41 plastic package. These diodes offer high surge current capability and are designed for rectifier applications. They are available with voltage ratings from 50V to 1000V.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name)
- Marking: Model number (e.g., 1N4001)
- Polarity: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Conditions | 1N4001 | 1N4002 | 1N4003 | 1N4004 | 1N4005 | 1N4006 | 1N4007 |
| Maximum RMS Voltage | VRMS | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | |
| Average Forward Current | IF(AV) | A | 60Hz Half-sine wave, Resistance load, Ta=75 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Maximum Peak Forward Voltage | VFM | V | IFM =1.0A, T=25 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 | 1.1 |
| Maximum DC Blocking Voltage | VDC | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | |
| Maximum Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| Maximum Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =100 | 500 | 500 | 500 | 500 | 500 | 500 | 500 |
| Typical junction capacitance | CJ | pF | Measured at 1MHz and applied reverse voltage of 4.0V D.C. | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
| Typical Thermal Resistance | RJ-A | /W | Between junction and ambient | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| Typical Thermal Resistance | RJ-L | /W | Between junction and Lead | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
2410121849_JSCJ-1N4001_C5292930.pdf
Related Products
High Voltage Darlington Transistor Array Slkor ULN2001D for Relay Hammer Lamp and Display Driver
Product OverviewThe ULN2001X is a monolithic high voltage, high current Darlington transistor array integrated circuit. It consists of 3 sets of NPN Darlington tubes, featuring high voltage output characteristics and cathode clamp diodes for inductive load conversion. Each Darlington pair can handle ...
Slkor DTC143ZUA
Product OverviewThe Digital Transistor DTC(R1R2 SERIES)UA is an epitaxial planar die construction device featuring complementary PNP types available (DTA). It incorporates built-in biasing resistors (R1R2) and is also available in a lead-free version. This NPN style digital transistor is suitable ...
Slkor SL15T120FL
Product Overview The SL15T120FL/K is a high-performance power semiconductor device featuring FS Technology and low gate charge. It is designed for general-purpose inverters, induction heating (IH), and UPS applications. Key features include a typical saturation voltage (VCE(sat)) of 2.2V at IC=15A ...
Versatile Slkor SL0C20A 20V 20A N Channel MOSFET Suitable for Hard Switched Power Electronics Circuits
Product OverviewThe SL0C20A is a 20V/20A N-Channel MOSFET designed with a high-density cell structure for ultra-low Rds(on). It offers fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation. This MOSFET ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
