loss Schottky Barrier Rectifier JSCJ SBDF10150CT with high current capability and transient protection
Key Attributes
Model Number:
SBDF10150CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Leakage Current (Ir):
100uA@150V
Voltage - DC Reverse (Vr) (Max):
105V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
800mV@5A
Current - Rectified:
10A
Mfr. Part #:
SBDF10150CT
Package:
TO-220F
Product Description
Product Overview
The SBD10150CT and SBDF10150CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Codes: SBD10150CT, SBDF10150CT
- Package Types: TO-220-3L, TO-220F
- Construction: Guard Ring Die Construction for Transient Protection
- Marking: SBD 10150CT XXXX, SBD(F)10150CT XXXX (XXXX = Code), Solid dot = Green molding compound device
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD10150CT | SBDF10150CT |
|---|---|---|---|---|---|---|---|---|
| Peak repetitive reverse voltage | VRRM | 150 | V | ✔ | ✔ | |||
| Working peak reverse voltage | VRWM | 150 | V | ✔ | ✔ | |||
| DC blocking voltage | VR | 150 | V | ✔ | ✔ | |||
| RMS reverse voltage | VR(RMS) | 105 | V | ✔ | ✔ | |||
| Average rectified output current | IO | 10 | A | ✔ | ✔ | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 120 | A | ✔ | ✔ | |||
| Reverse voltage | V(BR) | IR = 1mA | 150 | V | ✔ | ✔ | ||
| Reverse current | IR | VR = 150V, Tj = 25 | 0.0001 | 0.01 | mA | ✔ | ✔ | |
| Reverse current | IR | VR = 150V, Tj = 125 | 1.0 | 2.0 | mA | ✔ | ✔ | |
| Forward voltage | VF | IF = 5A, Tj = 25 | 0.64 | 0.78 | V | ✔ | ✔ | |
| Forward voltage | VF | IF = 5A, Tj = 125 | 0.69 | 0.87 | V | ✔ | ✔ | |
| Forward voltage | VF | IF = 10A, Tj = 25 | 0.80 | V | ✔ | ✔ | ||
| Forward voltage | VF | IF = 10A, Tj = 125 | 0.87 | V | ✔ | ✔ | ||
| Thermal resistance from junction to ambient | RJA | 62.5 | /W | ✔ | ||||
| Thermal resistance from junction to case | RJc | Tc=25 | 2.0 | 3.0 | /W | ✔ | ||
| Junction temperature | Tj | -55 | 150 | ✔ | ✔ | |||
| Storage temperature | Tstg | -55 | 150 | ✔ | ✔ |
2410121810_JSCJ-SBDF10150CT_C2992250.pdf
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